PartNumber | APT35GN120BG | APT35GN120L2DQ2G | APT35GN120L2DQ2 |
Description | IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS | IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS | |
Manufacturer | Microchip | Microchip | Microsemi Corporation |
Product Category | IGBT Transistors | IGBT Transistors | IGBTs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | TO-247-3 | TO-264MAX-3 | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | - |
Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | 1.7 V |
Maximum Gate Emitter Voltage | 30 V | 30 V | 30 V |
Continuous Collector Current at 25 C | 94 A | 94 A | 94 A |
Pd Power Dissipation | 379 W | 379 W | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 94 A | 94 A | 94 A |
Height | 5.31 mm | 5.21 mm | - |
Length | 21.46 mm | 26.49 mm | - |
Operating Temperature Range | - 55 C to + 150 C | - 55 C to + 150 C | - |
Width | 16.26 mm | 20.5 mm | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | - |
Continuous Collector Current | 94 A | 94 A | - |
Gate Emitter Leakage Current | 600 nA | 600 nA | 600 nA |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 1 | 1 | - |
Subcategory | IGBTs | IGBTs | - |
Unit Weight | 1.340411 oz | 0.373904 oz | 0.373904 oz |
Series | - | - | - |
Package Case | - | - | TO-264-3, TO-264AA |
Input Type | - | - | Standard |
Mounting Type | - | - | Through Hole |
Supplier Device Package | - | - | * |
Power Max | - | - | 379W |
Reverse Recovery Time trr | - | - | - |
Current Collector Ic Max | - | - | 94A |
Voltage Collector Emitter Breakdown Max | - | - | 1200V |
IGBT Type | - | - | NPT, Trench Field Stop |
Current Collector Pulsed Icm | - | - | 105A |
Vce on Max Vge Ic | - | - | 2.1V @ 15V, 35A |
Switching Energy | - | - | 2.315mJ (off) |
Gate Charge | - | - | 220nC |
Td on off 25°C | - | - | 24ns/300ns |
Test Condition | - | - | 800V, 35A, 2.2 Ohm, 15V |
Pd Power Dissipation | - | - | 379 W |
Collector Emitter Voltage VCEO Max | - | - | 1.2 kV |