APT13003DI-G1 vs APT13003DU-E1 vs APT13003DU

 
PartNumberAPT13003DI-G1APT13003DU-E1APT13003DU
DescriptionBipolar Transistors - BJT Pwr Hi Volt Trans NPN 450V 24W
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single, Pre-Biased
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max450 V--
Emitter Base Voltage VEBO9 V--
Collector Emitter Saturation Voltage300 mV--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT4 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesAPT13003-APT13003
DC Current Gain hFE Max30 at 500 mA, 2 V--
PackagingTube-Bulk
BrandDiodes Incorporated--
Continuous Collector Current1.5 A--
DC Collector/Base Gain hfe Min16 at 500 mA, 2 V--
Pd Power Dissipation24 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3600--
SubcategoryTransistors--
Unit Weight0.011993 oz--
Package Case--TO-225AA, TO-126-3
Mounting Type--Through Hole
Supplier Device Package--TO-126
Power Max--20W
Transistor Type--NPN
Current Collector Ic Max--1.5A
Voltage Collector Emitter Breakdown Max--450V
DC Current Gain hFE Min Ic Vce--5 @ 1A, 2V
Vce Saturation Max Ib Ic--400mV @ 250mA, 1A
Current Collector Cutoff Max---
Frequency Transition--4MHz
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