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| PartNumber | ALD210808PCL | ALD210808ASCL | ALD210808APCL |
| Description | MOSFET Quad N-Ch Matched Pr VGS=0.0V | MOSFET Quad N-Ch Matched Pr VGS=0.0V | MOSFET Quad N-Ch Matched Pr VGS=0.0V |
| Manufacturer | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | Through Hole |
| Package / Case | PDIP-16 | SOIC-16 | PDIP-16 |
| Number of Channels | 4 Channel | 4 Channel | 4 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 10 V | 10 V | 10 V |
| Id Continuous Drain Current | 70 mA | 70 mA | 70 mA |
| Rds On Drain Source Resistance | 25 Ohms | 25 Ohms | 25 Ohms |
| Vgs th Gate Source Threshold Voltage | 800 mV | 800 mV | 800 mV |
| Vgs Gate Source Voltage | 10.6 V | 10.6 V | 10.6 V |
| Minimum Operating Temperature | 0 C | 0 C | 0 C |
| Maximum Operating Temperature | + 70 C | + 70 C | + 70 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | 500 mW (1/2 W) |
| Configuration | Quad | Quad | Quad |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | EPAD | EPAD | EPAD |
| Packaging | Tube | Tube | Tube |
| Series | ALD210808P | ALD210808A | ALD210808A |
| Transistor Type | 4 N-Channel | 4 N-Channel | 4 N-Channel |
| Brand | Advanced Linear Devices | Advanced Linear Devices | Advanced Linear Devices |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 10 ns | 10 ns | 10 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
| Unit Weight | 0.036156 oz | 0.023492 oz | 0.036156 oz |