2SD1207S-AE vs 2SD1207S vs 2SD1207

 
PartNumber2SD1207S-AE2SD1207S2SD1207
DescriptionBipolar Transistors - BJT BIP NPN 2A 50VBipolar Transistors - BJT BIP NPN 2A 50V
ManufacturerON SemiconductorTOS-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.15 V0.15 V-
Maximum DC Collector Current4 A2 A-
Gain Bandwidth Product fT150 MHz150 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2SD12072SD1207-
DC Current Gain hFE Max560400-
PackagingReelBulk-
BrandON Semiconductor--
Continuous Collector Current2 A2 A-
Pd Power Dissipation1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Package Case-MP-3-
Pd Power Dissipation-1 W-
Collector Emitter Voltage VCEO Max-50 V-
Collector Base Voltage VCBO-60 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-140-
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