2SB1181TLQ vs 2SB1181 vs 2SB1181 , R5323N032B , E

 
PartNumber2SB1181TLQ2SB11812SB1181 , R5323N032B , E
DescriptionBipolar Transistors - BJT PNP 80V 1ABipolar Junction Transistor, PNP Type, TO-252
ManufacturerROHM SemiconductorROHM-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseCPT-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 80 V--
Collector Base Voltage VCBO- 80 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.4 V--
Maximum DC Collector Current- 1 A--
Gain Bandwidth Product fT100 MHz--
Maximum Operating Temperature+ 150 C--
Series2SB1181--
DC Current Gain hFE Max390--
Height2.3 mm--
Length6.5 mm--
PackagingReel--
Width5.5 mm--
BrandROHM Semiconductor--
Continuous Collector Current- 1 A--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation10 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
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