2PD602ASL,215 vs 2PD602ASL,235 vs 2PD602ASL

 
PartNumber2PD602ASL,2152PD602ASL,2352PD602ASL
DescriptionBipolar Transistors - BJT 50V 500MA NPN GEN-PURPOSE TRANBipolar Transistors - BJT Trans GP BJT NPN 50V 0.5A 3-PinTRANS, AEC-Q101, NPN, 50V, 180MHZ, SOT23, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:50V, Transition Frequency ft:180MHz, Power Dissipation Pd:200mW, DC Collector Current:500mA,
ManufacturerNexperiaNexperiaNXP Semiconductors
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3SOT-23-3-
Transistor PolarityNPNNPN-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current0.5 A--
Gain Bandwidth Product fT180 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max40 at 500 mA, 10 V--
Height1 mm--
Length3 mm--
PackagingReelReelDigi-ReelR Alternate Packaging
Width1.4 mm--
BrandNexperiaNexperia-
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation250 mW--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity300010000-
SubcategoryTransistorsTransistors-
Part # Aliases2PD602ASL T/R--
Unit Weight0.000282 oz--
Series--Automotive, AEC-Q101
Package Case--TO-236-3, SC-59, SOT-23-3
Mounting Type--Surface Mount
Supplier Device Package--SOT-23 (TO-236AB)
Power Max--250mW
Transistor Type--NPN
Current Collector Ic Max--500mA
Voltage Collector Emitter Breakdown Max--50V
DC Current Gain hFE Min Ic Vce--170 @ 150mA, 10V
Vce Saturation Max Ib Ic--600mV @ 30mA, 300mA
Current Collector Cutoff Max--10nA (ICBO)
Frequency Transition--180MHz
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