PartNumber | 2N7002W-7-F | 2N7002W-7-F , MAX6716UTS | 2N7002W-7-F , MAX6716UTSYD3 |
Description | MOSFET 60V 200mW | ||
Manufacturer | Diodes Incorporated | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-323-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 115 mA | - | - |
Rds On Drain Source Resistance | 13.5 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 200 mW | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 1 mm | - | - |
Length | 2.2 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | 2N7002W | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | Enhancement Mode Field Effect Transistor | - | - |
Width | 1.35 mm | - | - |
Brand | Diodes Incorporated | - | - |
Forward Transconductance Min | 80 mS | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 11 ns | - | - |
Typical Turn On Delay Time | 7 ns | - | - |
Unit Weight | 0.000988 oz | - | - |