2N7002P,215 vs 2N7002P 2N7002 vs 2N7002P

 
PartNumber2N7002P,2152N7002P 2N70022N7002P
DescriptionMOSFET 60V 0.3A N-CHANNEL TRENCH MOSFETINSTOCK
ManufacturerNexperia-NXP
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current360 mA--
Rds On Drain Source Resistance1.6 Ohms--
Vgs th Gate Source Threshold Voltage1.1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge0.6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation420 mW--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel-Digi-ReelR Alternate Packaging
Height1 mm--
Length3 mm--
ProductMOSFET Small Signal--
Transistor Type1 N-Channel Trench MOSFET--
Width1.4 mm--
BrandNexperia--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time4 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time10 ns--
Typical Turn On Delay Time3 ns--
Unit Weight0.000882 oz--
Series---
Package Case--TO-236-3, SC-59, SOT-23-3
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--SOT-23 (TO-236AB)
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--350mW
Drain to Source Voltage Vdss--60V
Input Capacitance Ciss Vds--50pF @ 10V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--360mA (Ta)
Rds On Max Id Vgs--1.6 Ohm @ 500mA, 10V
Vgs th Max Id--2.4V @ 250μA
Gate Charge Qg Vgs--0.8nC @ 4.5V
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