PartNumber | 2N696 | 2N696(A) | 2N6966 |
Description | Bipolar Transistors - BJT Power BJT | ||
Manufacturer | Microchip | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | N | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-5-3 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Base Voltage VCBO | 60 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 1.5 V | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 200 C | - | - |
DC Current Gain hFE Max | 60 at 150 mA, 10 VDC | - | - |
Packaging | Bulk | - | - |
Brand | Microchip / Microsemi | - | - |
DC Collector/Base Gain hfe Min | 20 at 150 mA, 10 VDC | - | - |
Pd Power Dissipation | 600 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 1 | - | - |
Subcategory | Transistors | - | - |