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| PartNumber | 2N6420 PBFREE | 2N6421 | 2N6420 |
| Description | Bipolar Transistors - BJT PNP 250Vcbo 175Vceo 6.0Vebo | Darlington Transistors . . | TO 66 1.0 & 2.0 Amp Power Transistors PNP / BOXED RoHS Compliant: Yes |
| Manufacturer | Central Semiconductor | Central Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Darlington Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-66-2 | TO-66 | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 175 V | - | - |
| Collector Base Voltage VCBO | 250 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.75 V | - | - |
| Gain Bandwidth Product fT | 10 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Series | 2N64 | 2N6421 | - |
| DC Current Gain hFE Max | 200 at 500 mA, 10 V | - | - |
| Packaging | Tube | Tube | - |
| Brand | Central Semiconductor | Central Semiconductor | - |
| Continuous Collector Current | 1 A | - | - |
| DC Collector/Base Gain hfe Min | 40 at 500 mA, 10 V | - | - |
| Pd Power Dissipation | 35 W | - | - |
| Product Type | BJTs - Bipolar Transistors | Darlington Transistors | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | - | 2N6421 PBFREE | - |