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| PartNumber | 2N6312 PBFREE | 2N6312 | 2N6313 |
| Description | Bipolar Transistors - BJT 40Vcbo 40Vceo 5.0Vebo 5.0A 75W | Bipolar Junction Transistor, PNP Type, TO-66 | |
| Manufacturer | Central Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-66-2 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 40 V | - | - |
| Collector Base Voltage VCBO | 40 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 4 V | - | - |
| Gain Bandwidth Product fT | 4 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Series | 2N63 | - | - |
| DC Current Gain hFE Max | 100 at 1.5 A, 2 V | - | - |
| Packaging | Tube | - | - |
| Brand | Central Semiconductor | - | - |
| Continuous Collector Current | 5 A | - | - |
| DC Collector/Base Gain hfe Min | 25 at 1.5 A, 2 V | - | - |
| Pd Power Dissipation | 75 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | Transistors | - | - |