2N6109G vs 2N6109 vs 2N610926

 
PartNumber2N6109G2N61092N610926
DescriptionBipolar Transistors - BJT 7A 50V 40W PNPBipolar Transistors - BJT PNP Med Power
ManufacturerON SemiconductorCentral Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max50 V50 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage3.5 V3.5 V-
Maximum DC Collector Current7 A7 A-
Gain Bandwidth Product fT10 MHz10 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2N61092N6109-
Height15.75 mm9.02 mm-
Length10.53 mm10.6 mm-
PackagingTubeBulk-
Width4.83 mm4.82 mm-
BrandON SemiconductorCentral Semiconductor-
Continuous Collector Current7 A0.45 A-
DC Collector/Base Gain hfe Min3030-
Pd Power Dissipation40 W40 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity50400-
SubcategoryTransistorsTransistors-
Unit Weight0.211644 oz0.081130 oz-
Part # Aliases-2N6109 PBFREE-
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