2N6107G vs 2N6107 vs 2N6107 SL

 
PartNumber2N6107G2N61072N6107 SL
DescriptionBipolar Transistors - BJT 7A 70V 40W PNPBipolar Transistors - BJT PNP Med PoweCentral Semiconductor 80Vcbo 70Vceo 5V 7.0A 10A Icm 40W
ManufacturerON SemiconductorON-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max70 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage3.5 V3.5 V-
Maximum DC Collector Current7 A7 A-
Gain Bandwidth Product fT10 MHz10 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2N61072N6107-
Height15.75 mm--
Length10.53 mm--
PackagingTubeBulk-
Width4.83 mm--
BrandON Semiconductor--
Continuous Collector Current7 A0.45 A-
DC Collector/Base Gain hfe Min30--
Pd Power Dissipation40 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.211644 oz0.081130 oz-
Part Aliases-BK-
Package Case-TO-220-
Pd Power Dissipation-40 W-
Collector Emitter Voltage VCEO Max-70 V-
Collector Base Voltage VCBO-80 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-30-
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