 | |  | |
| PartNumber | 2N5550TAR | 2N5550TA | 2N5550TAR_Q |
| Description | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-92-3 Kinked Lead | TO-92-3 Kinked Lead | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 140 V | 140 V | - |
| Collector Base Voltage VCBO | 160 V | 160 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 0.25 V | 0.25 V | - |
| Maximum DC Collector Current | 0.6 A | 0.6 A | - |
| Gain Bandwidth Product fT | 300 MHz | 300 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | 2N5550 | 2N5550 | - |
| DC Current Gain hFE Max | 250 | 250 | - |
| Height | 4.7 mm | 4.7 mm | - |
| Length | 4.7 mm | 4.7 mm | - |
| Packaging | Ammo Pack | Ammo Pack | - |
| Width | 3.93 mm | 3.93 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Continuous Collector Current | 0.6 A | 0.6 A | - |
| DC Collector/Base Gain hfe Min | 60 | 60 | - |
| Pd Power Dissipation | 625 mW | 625 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 2000 | 2000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 2N5550TAR_NL | - | - |
| Unit Weight | 0.008466 oz | 0.008466 oz | - |