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2N5010 vs 2N5011 vs 2N5012

 
PartNumber2N50102N50112N5012
DescriptionBipolar Transistors - BJT Power BJTBipolar Transistors - BJT Power BJTBipolar Transistors - BJT Power BJT
ManufacturerMicrochipMicrochipMicrochip
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSNNN
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity11100
SubcategoryTransistorsTransistorsTransistors
Technology--Si
Mounting Style--Through Hole
Package / Case--TO-5-3
Transistor Polarity--NPN
Configuration--Single
Collector Emitter Voltage VCEO Max--700 V
Collector Base Voltage VCBO--700 V
Emitter Base Voltage VEBO--5 V
Collector Emitter Saturation Voltage--1.6 V
Maximum DC Collector Current--200 mA
Minimum Operating Temperature--- 65 C
Maximum Operating Temperature--+ 200 C
DC Current Gain hFE Max--180 at 25 mA, 10 V
DC Collector/Base Gain hfe Min--30 at 25 mA, 10 V
Pd Power Dissipation--1 W
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