2N3773G vs 2N3773 vs 2N3773 LEADFREE

 
PartNumber2N3773G2N37732N3773 LEADFREE
DescriptionBipolar Transistors - BJT 16A 140V 150W NPNBipolar Transistors - BJT NPN Power SWBipolar Transistors - BJT NPN Power SW
ManufacturerON SemiconductorON-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-204-2--
Transistor PolarityNPNNPN-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max140 V--
Collector Base Voltage VCBO160 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage1.4 V4 V-
Maximum DC Collector Current16 A30 A-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 200 C+ 200 C-
Series2N37732N3773-
Height8.51 mm--
Length39.37 mm--
PackagingTrayTube-
Width26.67 mm--
BrandON Semiconductor--
Continuous Collector Current16 A16 A-
DC Collector/Base Gain hfe Min15--
Pd Power Dissipation150 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Unit Weight0.423993 oz0.225789 oz-
Package Case-TO-3-
Pd Power Dissipation-150000 mW-
Collector Emitter Voltage VCEO Max-140 V-
Collector Base Voltage VCBO-160 V-
Emitter Base Voltage VEBO-7 V-
Gain Bandwidth Product fT-4 MHz-
DC Collector Base Gain hfe Min-5 at 16 A 4 V-
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