2N3500 vs 2N3500/TR vs 2N3500JAN

 
PartNumber2N35002N3500/TR2N3500JAN
DescriptionBipolar Transistors - BJT Small-Signal BJTBipolar Transistors - BJTTrans GP BJT NPN 150V 300mA 3-Pin TO-39 Bag - Bag (Alt: JAN2N3500)
ManufacturerMicrochipMicrochip-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSNN-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-39-3TO-39-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max150 V150 V-
Collector Base Voltage VCBO150 V150 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage200 mV0.4 V-
Maximum DC Collector Current300 mA300 mA-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 200 C+ 200 C-
DC Current Gain hFE Max120 at 150 mA, 10 V120 at 150 mA, 10 V-
PackagingBulkReel-
BrandMicrochip / MicrosemiMicrochip / Microsemi-
DC Collector/Base Gain hfe Min40 at 150 mA, 10 V15 at 300 mA, 10 V-
Pd Power Dissipation1 W1 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity1100-
SubcategoryTransistorsTransistors-
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