 | |  | |
| PartNumber | 2N3500 | 2N3500/TR | 2N350 |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | |
| Manufacturer | Microchip | Microchip | Microsemi Corporation |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single, Pre-Biased |
| RoHS | N | N | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-39-3 | TO-39-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 150 V | 150 V | - |
| Collector Base Voltage VCBO | 150 V | 150 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 200 mV | 0.4 V | - |
| Maximum DC Collector Current | 300 mA | 300 mA | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 200 C | + 200 C | - |
| DC Current Gain hFE Max | 120 at 150 mA, 10 V | 120 at 150 mA, 10 V | - |
| Packaging | Bulk | Reel | Bulk |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| DC Collector/Base Gain hfe Min | 40 at 150 mA, 10 V | 15 at 300 mA, 10 V | - |
| Pd Power Dissipation | 1 W | 1 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Series | - | - | - |
| Package Case | - | - | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-39 (TO-205AD) |
| Power Max | - | - | 1W |
| Transistor Type | - | - | NPN |
| Current Collector Ic Max | - | - | 300mA |
| Voltage Collector Emitter Breakdown Max | - | - | 150V |
| DC Current Gain hFE Min Ic Vce | - | - | 40 @ 150mA, 10V |
| Vce Saturation Max Ib Ic | - | - | 400mV @ 15mA, 150mA |
| Current Collector Cutoff Max | - | - | 10μA (ICBO) |
| Frequency Transition | - | - | - |