2N2904A vs 2N2904A/TR vs 2N2904AJAN

 
PartNumber2N2904A2N2904A/TR2N2904AJAN
DescriptionBipolar Transistors - BJT PNP Gen Pur SSBipolar Transistors - BJTTrans GP BJT PNP 60V 600mA 3-Pin TO-39 Bag - Bag (Alt: JAN2N2904A)
ManufacturerCentral SemiconductorMicrochip-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-39-3TO-205AD-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max60 V60 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage2.6 V0.4 V-
Maximum DC Collector Current600 mA600 mA-
Gain Bandwidth Product fT200 MHz--
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 200 C+ 200 C-
Series2N2904--
Height6.6 mm--
Length9.4 mm--
PackagingBulkReel-
Width9.4 mm--
BrandCentral SemiconductorMicrochip / Microsemi-
DC Collector/Base Gain hfe Min40 at 10 mA, 10 V40 at 100 uA, 10 V-
Pd Power Dissipation600 mW3 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity500100-
SubcategoryTransistorsTransistors-
Part # Aliases2N2904A PBFREE--
Technology-Si-
DC Current Gain hFE Max-175 at 1 mA, 10 V-
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