PartNumber | 2N2222Ae3 | 2N2222Ae3/TR | 2N2222Ae4 |
Description | Bipolar Transistors - BJT BJTs | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | N |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-18-3 | TO-206AA-3 | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
Collector Base Voltage VCBO | 75 V | 75 V | - |
Emitter Base Voltage VEBO | 6 V | 6 V | - |
Collector Emitter Saturation Voltage | 1 V | 0.3 V | - |
Maximum DC Collector Current | 800 mA | 800 mA | - |
Gain Bandwidth Product fT | 100 MHz | - | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 200 C | + 200 C | - |
Packaging | Foil Bag | Reel | Bulk |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Continuous Collector Current | 800 mA | - | - |
DC Collector/Base Gain hfe Min | 30 | 30 at 500 mA, 10 V | - |
Pd Power Dissipation | 500 mW | 0.5 W | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 100 | 1 |
Subcategory | Transistors | Transistors | Transistors |
DC Current Gain hFE Max | - | 325 at 1 mA, 10 V | - |