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| PartNumber | 2N2222AUB | 2N2222AUB/TR | 2N2222AUB1 |
| Description | Bipolar Transistors - BJT NPN G.P. TRANSISTOR | Bipolar Transistors - BJT | Hi-Rel 40 V, 0.8 A NPN transistor - Bulk (Alt: 2N2222AUB1) |
| Manufacturer | TT Electronics | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | N | N | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Collector Base Voltage VCBO | 75 V | 75 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 1 V | 0.3 V | - |
| Maximum DC Collector Current | 0.8 A | 800 mA | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 200 C | + 200 C | - |
| DC Current Gain hFE Max | 325 | 325 at 1 mA, 10 V | - |
| Height | 1.37 mm | - | - |
| Length | 3.18 mm | - | - |
| Packaging | Bulk | Reel | - |
| Width | 2.67 mm | - | - |
| Brand | Optek / TT Electronics | Microchip / Microsemi | - |
| DC Collector/Base Gain hfe Min | 50 | 30 at 500 mA, 10 V | - |
| Pd Power Dissipation | 500 mW | 0.5 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 100 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Package / Case | - | LCC-3 | - |