2DB1188P-13 vs 2DB1188P-7 vs 2DB1188Q

 
PartNumber2DB1188P-132DB1188P-72DB1188Q
DescriptionBipolar Transistors - BJT 1000W -32Vceo
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-89-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max32 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT120 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2DB11--
Height1.5 mm--
Length4.5 mm--
PackagingReel--
Width2.48 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min82--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.001834 oz--
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