RMLV0416EGBG-4S2#KC0

Mfr. #:: RMLV0416EGBG-4S2#KC0
Fabricante:: Renesas Electronics
Descripción:: SRAM 4Mb 3V Adv. SRAM x16, FBGA, 45NS, T+R
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: RMLV0416EGBG-4S2#KC0 Ficha de datos
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HTML Datasheet:: RMLV0416EGBG-4S2#KC0 Datasheet RMLV0416EGBG-4S2#KC0 Datasheet (P4-P6)RMLV0416EGBG-4S2#KC0 Datasheet (P7-P9)RMLV0416EGBG-4S2#KC0 Datasheet (P10-P12)RMLV0416EGBG-4S2#KC0 Datasheet (P13-P15)
ECAD Model:

Atributo del producto
Valor de atributo

Fabricante:: Electrónica Renesas

Categoria de producto:: SRAM

RoHS:: Y

Embalaje:: Carrete

Marca:: Electrónica Renesas

Sensible a la humedad:: Yes

Tipo de producto:: SRAM

Cantidad de paquete de fábrica:: 1000

Subcategoría:: Memoria y almacenamiento de datos

Tags: RMLV0416EGB, RMLV0416, RMLV041, RMLV04, RMLV0, RMLV, RML

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RMLV0416EGBG-4S2#KC0 Descripción

***et: SRAM Chip Async Single 3V 4M-Bit 256KWord x 16 45ns 48-Pin FBGA Embossed T/R

*** Electronic Components: SRAM 4Mb 3V Adv. SRAM x16, FBGA, 45NS, T+R

***egrated Device Technology: 4Mb Advanced LPSRAM (256-kword × 16-bit)

***i-Key: IC SRAM 4MBIT PARALLEL 48TFBGA

***esas: Single 3V supply: 2.7V to 3.6V Access time: 45ns (max.) Current consumption: Standby: 0.4µA (typ.) Equal access and cycle times Common data input and output Three state output Directly TTL compatible All inputs and outputs Battery backup operation

*** Source Electronics: 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM | IC SRAM 2M PARALLEL 48MINIBGA

***ical: SRAM Chip Async Single 3.3V 2M-bit 128K x 16 55ns 48-Pin Mini-BGA

***-Wing Technology: e1 Surface Mount Tray SRAM - Asynchronous ic memory 55ns 8mm 3mA 2Mb

***I SCT: Serial SRAM, 128Kx16, 1.65 to 3.6V, BGA-48, RoHS

***S.I.T. Europe - USA - Asia: Standard SRAM, 128KX16, 55ns, CMOS, PBGA48

***or: IC SRAM 2MBIT PARALLEL 48MINIBGA

***DA Technology Co., Ltd.: Product Description Demo for Development.

***S: French Electronic Distributor since 1988

***nell: SRAM, 2MBIT, 55NS, MINI BGA-48; Memory Size: 2Mbit; SRAM Memory Configuration: 128K x 16bit; Supply Voltage Range: 2.5V to 3.6V; Memory Case Style: Mini BGA; No. of Pins: 48Pins; Access Time: 55ns; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2018)

***ow.cn: SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 48-Pin Mini-BGA

***nell: SRAM, 4MBIT, 10NS, BGA-48; Memory Size: 4Mbit; SRAM Memory Configuration: 256K x 16bit; Supply Voltage Range: 2.4V to 3.6V; Memory Case Style: BGA; No. of Pins: 48Pins; Access Time: 10ns; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2018)

***trelec: SRAM Operating temperature: -40...+85 °C Power supply: 2.4...3.6 V Supply current: 40 mA Organisation: 256 k x 16 Bit Package: miniBGA-48

*** Source Electronics: 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY | IC SRAM 4M PARALLEL 48TFBGA

***trelec: SRAM Operating temperature: -40...+85 °C Power supply: 3.1...3.6 V Supply current: 110 mA Organisation: 256 k x 16 Bit Package: miniBGA-48

***ark: Sram, 4Mbit, 10Ns, Minibga-48; Sram Type:Asynchronous Sram; Memory Configuration:256K X 16Bit; Ic Case/Package:Mini Bga; No. Of Pins:48Pins; Supply Voltage Min:3.135V; Supply Voltage Max:3.6V; Supply Voltage Nom:3.3V Rohs Compliant: Yes |Integrated Silicon Solution (Issi) IS61LV25616AL-10BLI

***nell: SRAM, 4MBIT, 10NS, MINI BGA-48; Memory Size: 4Mbit; SRAM Memory Configuration: 256K x 16bit; Supply Voltage Range: 3.135V to 3.63V; Memory Case Style: Mini BGA; No. of Pins: 48Pins; Access Time: 10ns; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2018)

***et: DRAM Chip DDR2 SDRAM 512M-Bit 64M x 8 1.8V 60-Pin FBGA

***-Wing Technology: Active Copper Silver Tin 3-STATE 2014 ic memory 0C~85C TC 1.7V 512Mb 0.01A

***ron SCT: DRAM, DDR2 SDRAM, 512Mb, x8, 60-ball FBGA, RoHS

*** Americas: U87B DDR2 SDRAM 64MX8 PLASTIC GREEN FBGA 1.8V

*** Stop Electro: DDR2 DRAM, 64MX8, 0.4ns, CMOS, PBGA60

***i-Key: IC DRAM 512MBIT PARALLEL 60FBGA

***DA Technology Co., Ltd.: Product Description Demo for Development.

***el Electronic: IC, OCTAL D-TYPE LATCH, 74HCT573

***ark: Dram, 64M X 8Bit, 0 To 85Deg C; Dram Type:ddr2; Dram Density:512Mbit; Dram Memory Configuration:64M X 8Bit; Clock Frequency:400Mhz; Memory Case Style:tfbga; No. Of Pins:60Pins; Supply Voltage Nom:1.8V; Access Time:2.5Ns Rohs Compliant: Yes

***et: DRAM Chip DDR3L SDRAM 1G-Bit 128Mx8 1.35V 78-Pin F-BGA

***-Wing Technology: Surface Mount Tray 128MX8 SDRAM - DDR3L ic memory 933MHz 20ns 10.5mm 0.162mA

***ron SCT: DRAM, DDR3 SDRAM, 1Gb, x8, 1.35V, 78-ball FBGA, RoHS

***icontronic: DDR3L DRAM, 128MX8, 0.195ns, CMOS, PBGA78

***enic: FBGA-78(8x10.5) DDR SDRAM ROHS

***DA Technology Co., Ltd.: Product Description Demo for Development.

***nell: DRAM, 128M X 8BIT, 0 TO 95DEG C;

***ark: DRAM, 128M X 8BIT, 0 TO 95DEG C; DRAM Type:DDR3; Memory Configuration:128M x 8bit; Clock Frequency Max:933MHz; IC Case / Package:TFBGA; No. of Pins:78Pins; Supply Voltage Nom:1.35V; IC Mounting:Surface Mount; Product Range:- RoHS Compliant: Yes

***el Electronic: DDR DRAM, 128MX8, 0.195ns, CMOS, PBGA78, 8 X 10.50 MM, LEAD FREE, FBGA-78

***et: DRAM Chip DDR3L SDRAM 1G-Bit 128Mx8 1.35V 78-Pin F-BGA

*** Americas: DDR3 SDRAM 128MX8 PLASTIC GREEN FBGA 1.35V IND TEMP

***ron SCT: DRAM, DDR3 SDRAM, 1Gb, x8, 1.35V, 78-ball FBGA, RoHS

***ponent Sense: IC DDR3 128x8 667MHz BGA 78 8K cycles 1.

***nsix Microsemi: DDR3L DRAM, 256MX16, CMOS, PBGA96

***S: French Electronic Distributor since 1988

***ark: Dram, 128M X 8Bit, -40 To 95Deg C; Dram Type:ddr3; Dram Density:1Gbit; Dram Memory Configuration:128M X 8Bit; Clock Frequency:933Mhz; Memory Case Style:tfbga; No. Of Pins:78Pins; Supply Voltage Nom:1.35V; Access Time:1.07Ns Rohs Compliant: Yes

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: RMLV0416EGSB-4S2#AA1 OMO.#: OMO-RMLV0416EGSB-4S2-AA1	SRAM SRAM 4MB 3V X16 TSOP44 45NS -40TO85C
	Mfr.#: RMLV0416EGBG-4S2#AC0 OMO.#: OMO-RMLV0416EGBG-4S2-AC0	SRAM 4Mb 3V Adv. SRAM x16 FBGA 45NS Tray
	Mfr.#: RMLV0416EGSB-4S2#HA1 OMO.#: OMO-RMLV0416EGSB-4S2-HA1	SRAM SRAM 4MB 3V X16 TSOP44 45NS -40TO85C
	Mfr.#: RMLV0416EGBG-4S2#KC0 OMO.#: OMO-RMLV0416EGBG-4S2-KC0	SRAM 4Mb 3V Adv. SRAM x16, FBGA, 45NS, T+R
	Mfr.#: RMLV0416EGSB-4S2#HA0 OMO.#: OMO-RMLV0416EGSB-4S2-HA0	SRAM 4Mb 3V Adv. SRAM x16, TSOP, 45NS, T+R
	Mfr.#: RMLV0416EGBG-4S2 OMO.#: OMO-RMLV0416EGBG-4S2-1190	Nuevo y original
	Mfr.#: RMLV0416EGSB-4S2 OMO.#: OMO-RMLV0416EGSB-4S2-241	SRAM 256Kx16 45ns TSOP44

Disponibilidad

Valores:: Available
En orden:: 5500
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RMLV0416EGBG-4S2#KC0

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes