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STF28N60DM2

STF28N60DM2
Mfr. #:
STF28N60DM2
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP package
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STF28N60DM2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STF28N60DM2 más información STF28N60DM2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
21 A
Rds On - Resistencia de la fuente de drenaje:
130 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
25 V
Qg - Carga de puerta:
34 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
30 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
MDmesh
Serie:
STF28N60DM2
Tipo de transistor:
1 N-Channel
Marca:
STMicroelectronics
Transconductancia directa - Mín .:
-
Otoño:
9.3 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7.3 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
53 ns
Tiempo típico de retardo de encendido:
16 ns
Unidad de peso:
0.081130 oz
Tags
STF28N60, STF28N6, STF28, STF2, STF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP package
***ical
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP Tube
***enic
600V 21A 130m´Î@10V10.5A 30W 4V@250uA 1.6pF@100V N Channel 1.5nF@100V 34nC@10V -55¡Í~+150¡Í@(Tj) TO-220FP-3 MOSFETs ROHS
***nell
MOSFET, N-CH, 600V, 21A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 30W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***ow.cn
Trans MOSFET N-CH Si 600V 26.7A Automotive 3-Pin(3+Tab) TO-220FP Tube
***el Electronic
In a Tube of 450, N-Channel MOSFET, 26.7 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPAW60R190CEXKSA1
***ineon SCT
Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS
***ark
Mosfet, N-Ch, 600V, 26.7A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:26.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPAW60R190CEXKSA1
***ineon
Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power
***icroelectronics
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-220 package
***ical
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB Tube
***el Electronic
Dual-Output, 2-A/1-A Low Dropout Voltage Regulators with Integrated SVS 24-HTSSOP -40 to 125
***ure Electronics
Single N-Channel 650 V 0.15 O 190 W Flange Mount Power Mosfet - TO-220-3
***ark
MOSFET, N-CH, 600V, 22A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***SIT Distribution GmbH
Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ical
Trans MOSFET N-CH Si 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak
***el Electronic
VISHAY SIHA22N60E-E3 MOSFET, N CHANNEL, 600V, 21A, TO-220F
***et
E SERIES HIGH VOLTAGE THIN-LEAD TO-220 FULLPAK 9 POWER MOSFE
***id Electronics
Power Field-Effect Transistor 8A I(D) 600V
***ark
MOSFET, N CHANNEL, 600V, 21A, TO-220F; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***icroelectronics
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220FP package
***ure Electronics
N-Channel 600 V 0.125 Ohm 45.5 nC MDmesh II Plus™ Power Mosfet - TO-220FP
***p One Stop
Trans MOSFET N-CH 650V 26A 3-Pin(3+Tab) TO-220FP Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 600V 26A MDmeshIIPlusTO220FP
***ark
MOSFET, N-CH, 600V, 26A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 26A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-Channel 600V - 0.25Ohm - 20A TO-220FP MDmesh™ POWER MOSFET
*** Source Electronics
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 20A TO220FP
***ark
MOSFET, N CHANNEL, 600V, 20A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:-RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
600V 22A 165m´Î@10V11A 39W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET Transistor; Transistor Polarity: N; MOSFET Transistor; Transistor Polarity: N Channel; Drain Source Voltage Vds: 600V; Continuous Drain Current Id: 22A; On Resistance Rds(on): 0.14ohm; Transistor Mounting: Through Hole; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
MDmesh DM2 Power MOSFETs
STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descripción Valores Precio
STF28N60DM2
DISTI # V36:1790_13796362		STMicroelectronicsTrans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP Tube0
    STF28N60DM2
    DISTI # 497-16351-5-ND    		STMicroelectronicsMOSFET N-CH 600V 21A
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		158In Stock
    • 2500:$2.6880
    • 500:$3.3466
    • 100:$3.9312
    • 50:$4.5360
    • 10:$4.7980
    • 1:$5.3400
    STF28N60DM2
    DISTI # STF28N60DM2    		STMicroelectronicsN-channel MDmesh >350 V to 700 V - Rail/Tube (Alt: STF28N60DM2)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 10000:$2.3900
    • 6000:$2.4900
    • 4000:$2.5900
    • 2000:$2.6900
    • 1000:$2.7900
    STF28N60DM2
    DISTI # STF28N60DM2    		STMicroelectronicsN-channel MDmesh >350 V to 700 V (Alt: STF28N60DM2)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€1.4900
    • 100:€1.6900
    • 500:€1.6900
    • 50:€1.7900
    • 10:€1.8900
    • 25:€1.8900
    • 1:€2.0900
    STF28N60DM2
    DISTI # 74Y7743    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 1:$2.4000
    STF28N60DM2
    DISTI # 511-STF28N60DM2    		STMicroelectronicsMOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP package
    RoHS: Compliant    		936
    • 1:$5.0800
    • 10:$4.3200
    • 100:$3.7400
    • 250:$3.5500
    • 500:$3.1800
    • 1000:$2.6800
    • 2000:$2.5500
    STF28N60DM2
    DISTI # 1116463P    		STMicroelectronicsMOSFET N-CH 600V 22A MDMESH DM2 TO-220FP, TU26
    • 1000:£1.9500
    • 500:£2.3150
    • 100:£2.7150
    • 10:£3.1250
    STF28N60DM2
    DISTI # 2531106    		STMicroelectronicsMOSFET, N-CH, 600V, 21A, TO-220FP0
    • 500:£2.4500
    • 250:£2.7400
    • 100:£2.8900
    • 10:£3.3200
    • 1:£4.3500
    STF28N60DM2
    DISTI # 2531106    		STMicroelectronicsMOSFET, N-CH, 600V, 21A, TO-220FP
    RoHS: Compliant    		0
    • 1000:$4.5200
    • 500:$5.3600
    • 100:$6.6100
    • 50:$7.2600
    • 1:$9.0200
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    Disponibilidad
    Valores:
    826
    En orden:
    2809
    Ingrese la cantidad:
    El precio actual de STF28N60DM2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    5,08 US$
    5,08 US$
    10
    4,32 US$
    43,20 US$
    100
    3,74 US$
    374,00 US$
    250
    3,55 US$
    887,50 US$
    500
    3,18 US$
    1 590,00 US$
    1000
    2,68 US$
    2 680,00 US$
    2000
    2,55 US$
    5 100,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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