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R6015ANX

R6015ANX
Mfr. #:
R6015ANX
Fabricante:
ROHM Semiconductor
Descripción:
MOSFET RECOMMENDED ALT 755-R6015KNX
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
R6015ANX Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
15 A
Rds On - Resistencia de la fuente de drenaje:
300 mOhms
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
50 W
Embalaje:
A granel
Marca:
Semiconductor ROHM
Transconductancia directa - Mín .:
4.5 S
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Parte # Alias:
R6015ANX
Unidad de peso:
0.211644 oz
Tags
R6015ANX, R6015A, R6015, R601, R60
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FM Bulk
***S
French Electronic Distributor since 1988
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 16 A, 260 mΩ, TO-220F
***ure Electronics
N-Channel 600 V 0.26 Ohm Flange Mount SuperFET Mosfet TO-220F
***Yang
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 16A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220F; Transistor type:SuperFET; Voltage, Vds typ:600V; Current, Id cont:16A; Resistance, Rds on:0.22ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-220F; Current, Idm pulse:48A; Pins, No. of:3; Power dissipation:37.9W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Vds max:600V; Voltage, Vgs th max:5V
***rchild Semiconductor
SuperFET® is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
***icroelectronics
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220FP
*** Source Electronics
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 17A TO220FP
***el Electronic
STMICROELECTRONICS STF22NM60N Power MOSFET, N Channel, 16 A, 600 V, 0.2 ohm, 10 V, 3 V
***enic
600V 16A 30W 220m´Î@10V8A 4V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ark
MOSFET, N CHANNEL, 600V, 16A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F
***ure Electronics
Single N-Channel 600 V 36 W 52 nC Silicon Through Hole Mosfet - TO-220F
*** Stop Electro
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):320mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220F; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***th Star Micro
SuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Product Highlights: 650V @Tj = 150C Typ. Rds(on)=0.32W Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff=95pF) 100% avalanche tested
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
600V 10.8A 299m´Î@10V5.4A 32.1W 4V@250Ã×A N Channel TO-220F-3 MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 10.8A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 600V, 10.8A, TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:10.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.255ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:32.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:32.4A
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ark
MOSFET, N-CH, 500V, 18A, TO-220FP; Transistor Polarity:N Channel; Continuous Dra
***or
MOSFET N-CH 500V 18A TO220
*** Europe
N-CH SINGLE 500V TO220FP
***
N-CHANNEL 500V
***nell
MOSFET, N-CH, 500V, 18A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***ure Electronics
N-Channel 600 V 220 mOhm Flange Mount FDmesh II Power Mosfet - TO-220FP
***icroelectronics
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220FP package
***ark
Power Mosfet, N Channel, 17 A, 600 V, 0.17 Ohm, 10 V, 4 V Rohs Compliant: Yes
***et
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220FP Tube
***ponent Stockers USA
17 A 600 V 0.22 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 17A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 17A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow
Parte # Mfg. Descripción Valores Precio
R6015ANX
DISTI # R6015ANX-ND		ROHM SemiconductorMOSFET N-CH 600V 15A TO-220FM
RoHS: Compliant
Min Qty: 1
Container: Bulk		320In Stock
  • 2500:$2.5802
  • 1000:$2.7160
  • 500:$3.2204
  • 100:$3.7830
  • 10:$4.6170
  • 1:$5.1400
R6015ANX
DISTI # R6015ANX		ROHM SemiconductorTrans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FM Bulk (Alt: R6015ANX)
RoHS: Compliant
Min Qty: 500
Container: Bulk		Europe - 0
  • 5000:€1.4900
  • 3000:€1.5900
  • 2000:€1.6900
  • 500:€1.7900
  • 1000:€1.7900
R6015ANX
DISTI # R6015ANX		ROHM SemiconductorTrans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FM Bulk - Bulk (Alt: R6015ANX)
RoHS: Compliant
Min Qty: 500
Container: Bulk		Americas - 0
  • 5000:$1.7900
  • 3000:$1.8900
  • 2000:$1.9900
  • 1000:$2.0900
  • 500:$2.1900
R6015ANX
DISTI # 755-R6015ANX		ROHM SemiconductorMOSFET RECOMMENDED ALT 755-R6015KNX
RoHS: Compliant		0
    R6015ANX
    DISTI # 8267548    		ROHM SemiconductorROHMMOSFETR6015ANX, PK110
    • 40:£3.2050
    • 20:£3.5600
    • 2:£3.9850
    R6015ANXROHM Semiconductor 64
    • 45:$5.2725
    • 13:$5.7000
    • 1:$8.5500
    R6015ANXROHM SemiconductorRoHS(ship within 1day)80
    • 1:$5.6200
    • 10:$4.2200
    • 50:$3.7200
    • 100:$3.1700
    • 500:$2.9500
    • 1000:$2.8500
    Imagen Parte # Descripción
    R6015FNX

    Mfr.#: R6015FNX

    OMO.#: OMO-R6015FNX

    		 MOSFET Trans MOSFET N-CH 600V 15A
    R6015ANX

    Mfr.#: R6015ANX

    OMO.#: OMO-R6015ANX

    		 MOSFET RECOMMENDED ALT 755-R6015KNX
    R6018ANJTL

    Mfr.#: R6018ANJTL

    OMO.#: OMO-R6018ANJTL-ROHM-SEMI

    		 MOSFET NCH MOSFET T/R 10V DRIVE
    R6015ANJTL

    Mfr.#: R6015ANJTL

    OMO.#: OMO-R6015ANJTL-ROHM-SEMI

    		 MOSFET TRANS MOSFET NCH 600V 15A 3PIN
    R6012ANJTL

    Mfr.#: R6012ANJTL

    OMO.#: OMO-R6012ANJTL-ROHM-SEMI

    		 MOSFET TRANS MOSFET NCH 600V 12A 3PIN
    R6013

    Mfr.#: R6013

    OMO.#: OMO-R6013-1190

    		 R6013 HALOGEN FREE, 4" X 242 1/2" CORE / Roll of 242 Feet
    R6018JNXC7G

    Mfr.#: R6018JNXC7G

    OMO.#: OMO-R6018JNXC7G-1190

    		 R6018JNX IS A POWER MOSFET WITH
    R6010120XXYA

    Mfr.#: R6010120XXYA

    OMO.#: OMO-R6010120XXYA-1190

    		 Nuevo y original
    R6010ANX TK10A60

    Mfr.#: R6010ANX TK10A60

    OMO.#: OMO-R6010ANX-TK10A60-1190

    		 Nuevo y original
    R6012FNJTL

    Mfr.#: R6012FNJTL

    OMO.#: OMO-R6012FNJTL-ROHM-SEMI

    		 MOSFET N-CH 600V 12A LPT
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de R6015ANX es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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