IPP60R120C7XKSA1

IPP60R120C7XKSA1
Mfr. #:
IPP60R120C7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP60R120C7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPP60R120C7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Serie:
CoolMOS C7
Ancho:
4.4 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Parte # Alias:
IPP60R120C7 SP001385054
Unidad de peso:
0.063493 oz
Tags
IPP60R12, IPP60R1, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220 Tube
***ineon SCT
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies, PG-TO220-3, RoHS
***ark
MOSFET, N-CH, 600V, 150DEG C, 92W ROHS COMPLIANT: YES
***et
MOS Power Transistors HV (>= 200V)
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPP60R120C7XKSA1
DISTI # 32826243
Infineon Technologies AGTrans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220 Tube500
  • 500:$2.1545
IPP60R120C7XKSA1
DISTI # IPP60R120C7XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V 19A TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$2.8360
IPP60R120C7XKSA1
DISTI # IPP60R120C7XKSA1
Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPP60R120C7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$2.1900
  • 1000:$2.0900
  • 2000:$1.9900
  • 3000:$1.9900
  • 5000:$1.8900
IPP60R120C7XKSA1
DISTI # SP001385054
Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001385054)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€2.2900
  • 10:€2.0900
  • 25:€1.9900
  • 50:€1.8900
  • 100:€1.8900
  • 500:€1.7900
  • 1000:€1.6900
IPP60R120C7XKSA1
DISTI # 726-IPP60R120C7XKSA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
823
  • 1:$4.1100
  • 10:$3.4900
  • 100:$3.0200
  • 250:$2.8700
  • 500:$2.5700
Imagen Parte # Descripción
STTH16L06CGY-TR

Mfr.#: STTH16L06CGY-TR

OMO.#: OMO-STTH16L06CGY-TR

Rectifiers Automotive Turbo 2 ultrafast high voltage rectifier
FFSP0665A

Mfr.#: FFSP0665A

OMO.#: OMO-FFSP0665A

Schottky Diodes & Rectifiers SIC TO220 SBD 6A 650V
NUCLEO-F767ZI

Mfr.#: NUCLEO-F767ZI

OMO.#: OMO-NUCLEO-F767ZI

Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F767ZI MCU, supports Arduino, ST Zio and morpho connectivity
BBB01-SC-505

Mfr.#: BBB01-SC-505

OMO.#: OMO-BBB01-SC-505

Single Board Computers Beaglebone Black Rev C
STTH16L06CGY-TR

Mfr.#: STTH16L06CGY-TR

OMO.#: OMO-STTH16L06CGY-TR-STMICROELECTRONICS

DIODES AND RECTIFIERS
KLZ2012MHR100HTD25

Mfr.#: KLZ2012MHR100HTD25

OMO.#: OMO-KLZ2012MHR100HTD25-TDK

FIXED IND 10UH 300MA 884 MOHM
NUCLEO-F767ZI

Mfr.#: NUCLEO-F767ZI

OMO.#: OMO-NUCLEO-F767ZI-STMICROELECTRONICS

STM32F767ZIT6 Microcontroller Development Board 0.032768MHz CPU 2MB Flash
BBB01-SC-505

Mfr.#: BBB01-SC-505

OMO.#: OMO-BBB01-SC-505-GHI-ELECTRONICS

Beagle Bone Black
FFSP0665A

Mfr.#: FFSP0665A

OMO.#: OMO-FFSP0665A-ON-SEMICONDUCTOR

DIODE SCHOTTKY 650V TO220-2
74404043220A

Mfr.#: 74404043220A

OMO.#: OMO-74404043220A-WURTH-ELECTRONICS

FIXED IND 22UH 1.11A 200 MOHM
Disponibilidad
Valores:
729
En orden:
2712
Ingrese la cantidad:
El precio actual de IPP60R120C7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,11 US$
4,11 US$
10
3,49 US$
34,90 US$
100
3,02 US$
302,00 US$
250
2,87 US$
717,50 US$
500
2,57 US$
1 285,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
Top