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HGTG20N60A4D

HGTG20N60A4D
Mfr. #:
HGTG20N60A4D
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 600V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTG20N60A4D Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
E
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.8 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
70 A
Pd - Disipación de energía:
290 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
HGTG20N60A4D
Embalaje:
Tubo
Corriente continua de colector Ic Max:
70 A
Altura:
20.82 mm
Longitud:
15.87 mm
Ancho:
4.82 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
70 A
Corriente de fuga puerta-emisor:
+/- 250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Parte # Alias:
HGTG20N60A4D_NL
Unidad de peso:
0.225401 oz
Tags
HGTG20N60A4D, HGTG20N60A, HGTG20N6, HGTG20, HGTG2, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
600V, SMPS SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST DIODE
***ure Electronics
HGTG20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-247
***et
PWR IGBT 45A,600V,SMPS N-CH W/DIODE TO-247
***Components
TRANSISTOR IGBT N-CH 600V 70A TO247
***ark
Pt P To247 45A 600V Smps Rohs Compliant: Yes
***i-Key
IGBT N-CH SMPS 600V 70A TO247
***eco
ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ
***Semiconductor
600V, SMPS IGBT
***nell
IGBT, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:70A; Voltage, Vce Sat Max:2.7V; Power Dissipation:290W; Case Style:TO-247; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:280A; Device Marking:HGTG20N60A4D; No. of Pins:3; Power, Pd:290W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:32ns; Time, Fall Typ:32ns; Time, Rise:12ns; Transistors, No. of:1
***rchild Semiconductor
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4D; Fall Time Typ:32ns; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Parte # Mfg. Descripción Valores Precio
HGTG20N60A4D
DISTI # V36:1790_06359605		ON SemiconductorPT P TO247 45A 600V SMPS1362
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 1:$4.3540
HGTG20N60A4D
DISTI # V99:2348_06359605		ON SemiconductorPT P TO247 45A 600V SMPS450
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 1:$4.3540
HGTG20N60A4D
DISTI # HGTG20N60A4DFS-ND		ON SemiconductorIGBT 600V 70A 290W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		337In Stock
  • 1350:$2.9565
  • 900:$3.4739
  • 450:$3.8520
  • 10:$4.9070
  • 1:$5.4400
HGTG20N60A4D
DISTI # 31882442		ON SemiconductorPT P TO247 45A 600V SMPS5215
  • 4500:$1.8144
  • 450:$1.9104
HGTG20N60A4D
DISTI # 31600626		ON SemiconductorPT P TO247 45A 600V SMPS1362
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 4:$4.3540
HGTG20N60A4D
DISTI # 31262149		ON SemiconductorPT P TO247 45A 600V SMPS450
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 3:$4.3540
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 9000
  • 450:$1.9900
  • 900:$1.9900
  • 1800:$1.9900
  • 2700:$1.9900
  • 4500:$1.8900
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 450		Asia - 0
  • 450:$3.1792
  • 900:$3.0569
  • 1350:$2.9437
  • 2250:$2.8386
  • 4500:$2.7407
  • 11250:$2.6493
  • 22500:$2.6059
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€2.4900
  • 10:€2.2900
  • 25:€2.1900
  • 50:€2.0900
  • 100:€1.9900
  • 500:€1.8900
  • 1000:€1.7900
HGTG20N60A4D
DISTI # 95B2568		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 95B2568)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$5.1800
  • 10:$4.4300
  • 25:$4.2400
  • 50:$4.0500
  • 100:$3.8600
  • 250:$3.6700
HGTG20N60A4D
DISTI # 95B2568		ON SemiconductorSINGLE IGBT, 600V, 70A,DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes397
  • 250:$3.5400
  • 100:$3.7200
  • 50:$3.9000
  • 25:$4.0900
  • 10:$4.2700
  • 1:$4.9900
HGTG20N60A4D
DISTI # 25M9637		ON SemiconductorIGBT Single Transistor, General Purpose, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 RoHS Compliant: Yes2606
  • 500:$3.0300
  • 250:$3.3800
  • 100:$3.5600
  • 50:$3.7400
  • 25:$3.9300
  • 10:$4.1100
  • 1:$4.8300
HGTG20N60A4D
DISTI # 512-HGTG20N60A4D		ON SemiconductorIGBT Transistors 600V
RoHS: Compliant		779
  • 1:$4.8300
  • 10:$4.1100
  • 100:$3.5600
  • 250:$3.3800
  • 500:$3.0300
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTransistor: IGBT,600V,40A,190W,TO247-3459
  • 1:$4.0900
  • 5:$3.7900
  • 30:$2.9700
  • 120:$2.5900
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTransistor: IGBT,600V,40A,190W,TO247-3455
  • 1:$4.0800
  • 5:$3.7900
  • 30:$2.9700
  • 120:$2.5900
HGTG20N60A4DFairchild Semiconductor Corporation 
RoHS: Compliant		Europe - 8
    HGTG20N60A4D
    DISTI # 1057679    		ON SemiconductorIGBT, TO-247
    RoHS: Compliant    		2645
    • 500:$4.9700
    • 250:$5.5400
    • 100:$5.8400
    • 10:$6.7500
    • 1:$7.9300
    HGTG20N60A4D
    DISTI # 1057679    		ON SemiconductorIGBT, TO-247
    RoHS: Compliant    		2631
    • 500:£2.3700
    • 250:£2.6300
    • 100:£2.7700
    • 10:£3.2000
    • 1:£4.1900
    HGTG20N60A4D
    DISTI # XSFP00000149449    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		390 in Stock0 on Order
    • 390:$4.4500
    • 60:$4.9000
    Imagen Parte # Descripción
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    		 Zener Diodes 22V 5W
    HGTG20N60A4

    Mfr.#: HGTG20N60A4

    OMO.#: OMO-HGTG20N60A4

    		 IGBT Transistors 600V N-Channel IGBT SMPS Series
    ISL9R460PF2

    Mfr.#: ISL9R460PF2

    OMO.#: OMO-ISL9R460PF2

    		 Diodes - General Purpose, Power, Switching 4A 600V Stealth
    FCPF099N65S3

    Mfr.#: FCPF099N65S3

    OMO.#: OMO-FCPF099N65S3

    		 MOSFET SuperFET3 650V 99 mOhm
    LM2937ET-8.0/NOPB

    Mfr.#: LM2937ET-8.0/NOPB

    OMO.#: OMO-LM2937ET-8-0-NOPB

    		 LDO Voltage Regulators 500 mA Low Dropout Regulator
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    Mfr.#: UC3846N

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    		 Switching Controllers Current-Mode PWM Controller
    76SB02ST

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    		 DIP Switches / SIP Switches DIP Switch SPST 2 Pos Tape Seal
    HGTG20N60A4

    Mfr.#: HGTG20N60A4

    OMO.#: OMO-HGTG20N60A4-ON-SEMICONDUCTOR

    		 IGBT 600V 70A 290W TO247
    LM2937ET-8.0/NOPB

    Mfr.#: LM2937ET-8.0/NOPB

    OMO.#: OMO-LM2937ET-8-0-NOPB-TEXAS-INSTRUMENTS

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    Disponibilidad
    Valores:
    694
    En orden:
    2677
    Ingrese la cantidad:
    El precio actual de HGTG20N60A4D es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,83 US$
    4,83 US$
    10
    4,11 US$
    41,10 US$
    100
    3,56 US$
    356,00 US$
    250
    3,38 US$
    845,00 US$
    500
    3,03 US$
    1 515,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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