IPAW60R190CEXKSA1

IPAW60R190CEXKSA1
Mfr. #:
IPAW60R190CEXKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET CONSUMER
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPAW60R190CEXKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPAW60R190CEXKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
26.7 A
Rds On - Resistencia de la fuente de drenaje:
440 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
63 nC
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
176 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
16.15 mm
Longitud:
10.65 mm
Serie:
CoolMOS CE
Tipo de transistor:
1 N-Channel
Ancho:
4.85 mm
Marca:
Infineon Technologies
Otoño:
8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
450
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
90 ns
Tiempo típico de retardo de encendido:
12 ns
Parte # Alias:
IPAW60R190CE SP001391612
Unidad de peso:
0.211644 oz
Tags
IPAW60R1, IPAW60R, IPAW6, IPAW, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
Trans MOSFET N-CH Si 600V 26.7A Automotive 3-Pin(3+Tab) TO-220FP Tube
***ineon SCT
Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS
***ark
Mosfet, N-Ch, 600V, 26.7A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:26.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Parte # Mfg. Descripción Valores Precio
IPAW60R190CEXKSA1
DISTI # V99:2348_13985573
Infineon Technologies AGTrans MOSFET N-CH Si 600V 26.7A 3-Pin(3+Tab) TO-220FP Tube870
  • 2700:$0.8856
  • 900:$1.0921
  • 450:$1.2596
  • 25:$1.4314
  • 10:$1.5904
  • 1:$2.0625
IPAW60R190CEXKSA1
DISTI # V36:1790_13985573
Infineon Technologies AGTrans MOSFET N-CH Si 600V 26.7A 3-Pin(3+Tab) TO-220FP Tube0
  • 450000:$0.7489
  • 225000:$0.7514
  • 45000:$0.9600
  • 4500:$1.3200
  • 450:$1.3800
IPAW60R190CEXKSA1
DISTI # IPAW60R190CEXKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
719In Stock
  • 5400:$0.8776
  • 2700:$0.9113
  • 900:$1.1813
  • 450:$1.3501
  • 25:$1.6876
  • 10:$1.7890
  • 1:$1.9900
IPAW60R190CEXKSA1
DISTI # 32628508
Infineon Technologies AGTrans MOSFET N-CH Si 600V 26.7A 3-Pin(3+Tab) TO-220FP Tube15300
  • 450:$1.0350
IPAW60R190CEXKSA1
DISTI # 32004835
Infineon Technologies AGTrans MOSFET N-CH Si 600V 26.7A 3-Pin(3+Tab) TO-220FP Tube870
  • 7:$2.0625
IPAW60R190CEXKSA1
DISTI # IPAW60R190CE
Infineon Technologies AGTrans MOSFET N-CH 650V 26.7A 3-Pin TO-220FP Tube (Alt: IPAW60R190CE)
RoHS: Compliant
Min Qty: 450
Container: Tube
Asia - 450
  • 22500:$0.9317
  • 11250:$0.9454
  • 4500:$0.9596
  • 2250:$0.9741
  • 1350:$1.0045
  • 900:$1.0369
  • 450:$1.0715
IPAW60R190CEXKSA1
DISTI # IPAW60R190CEXKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 26.7A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPAW60R190CEXKSA1)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$0.8159
  • 2700:$0.8309
  • 1800:$0.8599
  • 900:$0.8919
  • 450:$0.9259
IPAW60R190CEXKSA1
DISTI # SP001391612
Infineon Technologies AGTrans MOSFET N-CH 650V 26.7A 3-Pin TO-220FP Tube (Alt: SP001391612)
RoHS: Compliant
Min Qty: 45
Container: Tube
Europe - 0
  • 450:€0.7129
  • 270:€0.7639
  • 180:€0.8229
  • 90:€0.8919
  • 45:€1.0699
IPAW60R190CEXKSA1
DISTI # 97Y1815
Infineon Technologies AGMOSFET, N-CH, 600V, 26.7A, TO-220FP-3,Transistor Polarity:N Channel,Continuous Drain Current Id:26.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.17ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes363
  • 1000:$0.9420
  • 500:$1.1300
  • 100:$1.2900
  • 10:$1.6200
  • 1:$1.9100
IPAW60R190CEXKSA1
DISTI # 726-IPAW60R190CEXKSA
Infineon Technologies AGMOSFET CONSUMER
RoHS: Compliant
895
  • 1:$1.8900
  • 10:$1.6000
  • 100:$1.2800
  • 500:$1.1200
  • 1000:$0.9330
IPAW60R190CEXKSA1
DISTI # 1339785
Infineon Technologies AGMOSFET COOLMOS CE N-CH 600V 26A TO-220FP, TU1110
  • 4500:£0.8010
  • 2250:£0.8230
  • 450:£0.8620
IPAW60R190CEXKSA1
DISTI # 2617441
Infineon Technologies AGMOSFET, N-CH, 600V, 26.7A, TO-220FP-3808
  • 500:£0.8110
  • 250:£0.8710
  • 100:£0.9300
  • 25:£1.1600
  • 5:£1.3300
IPAW60R190CEXKSA1
DISTI # 2617441
Infineon Technologies AGMOSFET, N-CH, 600V, 26.7A, TO-220FP-3
RoHS: Compliant
737
  • 5400:$1.3600
  • 2700:$1.3800
  • 900:$1.7900
  • 450:$2.0400
  • 25:$2.5500
  • 10:$2.7000
  • 1:$3.0000
Imagen Parte # Descripción
IXDN609SIATR

Mfr.#: IXDN609SIATR

OMO.#: OMO-IXDN609SIATR

Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
IXDI614PI

Mfr.#: IXDI614PI

OMO.#: OMO-IXDI614PI

Gate Drivers 14-Ampere Low-Side Ultrafast MOSFET
RHRP3060

Mfr.#: RHRP3060

OMO.#: OMO-RHRP3060

Rectifiers 30A 600V
FDPF16N50T

Mfr.#: FDPF16N50T

OMO.#: OMO-FDPF16N50T

MOSFET 500V 16A NCH MOSFET
TPS22917DBVR

Mfr.#: TPS22917DBVR

OMO.#: OMO-TPS22917DBVR

Power Switch ICs - Power Distribution 2A LOW RON LOAD SWITCH
28B0485-000

Mfr.#: 28B0485-000

OMO.#: OMO-28B0485-000

Ferrite Cable Cores 320ohms 100MHz 4.88mm Inside Dia.
28B0686-200

Mfr.#: 28B0686-200

OMO.#: OMO-28B0686-200

Ferrite Cable Cores 242ohms 100MHz 9.53mm Inside Dia.
B72660M0140K072

Mfr.#: B72660M0140K072

OMO.#: OMO-B72660M0140K072

Varistors 14V 250A 2300pF Varistor CU4032K14G2
IXDN609SIATR

Mfr.#: IXDN609SIATR

OMO.#: OMO-IXDN609SIATR-IXYS-INTEGRATED-CIRCUITS-DIVIS

Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
IXDI614PI

Mfr.#: IXDI614PI

OMO.#: OMO-IXDI614PI-IXYS-INTEGRATED-CIRCUITS-DIVIS

Gate Drivers 14-Ampere Low-Side Ultrafast MOSFET
Disponibilidad
Valores:
895
En orden:
2878
Ingrese la cantidad:
El precio actual de IPAW60R190CEXKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,89 US$
1,89 US$
10
1,60 US$
16,00 US$
100
1,28 US$
128,00 US$
500
1,12 US$
560,00 US$
1000
0,93 US$
933,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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