S25FL512SAGBHVC13

S25FL512SAGBHVC13
Mfr. #:
S25FL512SAGBHVC13
Fabricante:
Cypress Semiconductor
Descripción:
NOR Flash Nor
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
S25FL512SAGBHVC13 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
S25FL512SAGBHVC13 más información S25FL512SAGBHVC13 Product Details
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor de ciprés
Categoria de producto:
NOR Flash
RoHS:
Y
Serie:
S25FL512S
Embalaje:
Carrete
Tipo de memoria:
NI
Marca:
Semiconductor de ciprés
Sensible a la humedad:
Yes
Tipo de producto:
NOR Flash
Cantidad de paquete de fábrica:
2500
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
MirrorBit
Tags
S25FL512SAGBHV, S25FL512SAGBH, S25FL512SAGB, S25FL512SAG, S25FL512SA, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
NOR Flash Serial-SPI 3V 512Mbit 512M x 1bit 8ns 24-Pin BGA T/R
***et
512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (S
***i-Key
IC FLASH 512M SPI 133MHZ 24BGA
***ark
TAPE AND REEL / 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, BGA-FAB024 IN T&R PACKING, WITH RESET#
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Parte # Mfg. Descripción Valores Precio
S25FL512SAGBHVC13
DISTI # S25FL512SAGBHVC13-ND
Cypress SemiconductorIC FLASH 512M SPI 133MHZ 24BGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$6.1113
S25FL512SAGBHVC13
DISTI # 727-25FL512SAGBHVC13
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
0
  • 1:$10.7100
  • 10:$9.8100
  • 25:$8.9200
  • 50:$8.5000
  • 100:$8.0300
  • 250:$7.4200
  • 500:$6.4700
  • 1000:$6.0200
  • 2500:$5.8000
Imagen Parte # Descripción
S25FL512SAGBHIA13

Mfr.#: S25FL512SAGBHIA13

OMO.#: OMO-S25FL512SAGBHIA13

NOR Flash Nor
S25FL512SAGBHVA10

Mfr.#: S25FL512SAGBHVA10

OMO.#: OMO-S25FL512SAGBHVA10

NOR Flash Nor
S25FL512SAGBHI310

Mfr.#: S25FL512SAGBHI310

OMO.#: OMO-S25FL512SAGBHI310

NOR Flash 512Mb 3V 133MHz Serial NOR Flash
S25FL512SDSBHV213

Mfr.#: S25FL512SDSBHV213

OMO.#: OMO-S25FL512SDSBHV213

NOR Flash Nor
S25FL512SAGMFAR13

Mfr.#: S25FL512SAGMFAR13

OMO.#: OMO-S25FL512SAGMFAR13

NOR Flash Nor
S25FL512SAG-AEC13

Mfr.#: S25FL512SAG-AEC13

OMO.#: OMO-S25FL512SAG-AEC13

NOR Flash
S25FL512SAGBHIS10

Mfr.#: S25FL512SAGBHIS10

OMO.#: OMO-S25FL512SAGBHIS10-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 133MHZ 24BGA FL-S
S25FL512SAGMFIR13

Mfr.#: S25FL512SAGMFIR13

OMO.#: OMO-S25FL512SAGMFIR13-CYPRESS-SEMICONDUCTOR

Flash 512Mb, 3V, 133Mhz SPI NOR Flash
S25FL512SDPBHI310

Mfr.#: S25FL512SDPBHI310

OMO.#: OMO-S25FL512SDPBHI310-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 66MHZ 24BGA FL-S
S25FL512SAGMFIG11

Mfr.#: S25FL512SAGMFIG11

OMO.#: OMO-S25FL512SAGMFIG11-CYPRESS-SEMICONDUCTOR

Flash 512Mb 3V 133MHz Serial NOR Flash
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de S25FL512SAGBHVC13 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Empezar con
Nuevos productos
  • LB Series Inductors
    TAIYO YUDEN's LB series inductors have expanded to include price competitive, AEC-Q200 qualified high-reliability version inductors.
  • BRL3225 Series
    TAIYO YUDEN's wire wound chip inductors are designed to save space and provide optimal inductance and DC resistance values.
  • Compare S25FL512SAGBHVC13
    S25FL512SAGBHV210 vs S25FL512SAGBHV213 vs S25FL512SAGBHV310
  • VF3 Hall Effect Sensor ICs
    Honeywell is pleased to announce its high sensitivity latching sensor ICs, VF360NT, VF360ST, that are AEC-Q100 qualified for use in the transportation industry. AEC-Q100 qualification provides enh
  • PLT Series Pulse Transformers
    KEMET's PLT pulse transformers are designed with a proprietary ferrite core and show excellent insertion loss characteristics.
  • MICRO SWITCH™ V7 Series
    Honeywell's V7 switch is available as a pin plunger style or with optional integral or auxiliary levers to actuate the switch and offer versatility in the application.
Top