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BFR843EL3E6327XTSA1

BFR843EL3E6327XTSA1
Mfr. #:
BFR843EL3E6327XTSA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors RF BIP TRANSISTORS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BFR843EL3E6327XTSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BFR843EL3E6327XTSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores bipolares de RF
RoHS:
Y
Tipo de transistor:
Bipolar
Tecnología:
SiGe
Polaridad del transistor:
NPN
Colector de CC / Ganancia base hfe Min:
230
Voltaje colector-emisor VCEO Max:
2.25 V
Corriente continua del colector:
55 mA
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TSLP-3
Embalaje:
Carrete
Frecuencia de operación:
12 GHz
Marca:
Infineon Technologies
Pd - Disipación de energía:
125 mW
Tipo de producto:
Transistores bipolares de RF
Cantidad de paquete de fábrica:
15000
Subcategoría:
Transistores
Parte # Alias:
843EL3 BFR E6327 SP001062610
Unidad de peso:
0.000017 oz
Tags
BFR84, BFR8, BFR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans RF BJT NPN 2.25V 0.055A 125mW Automotive 3-Pin TSLP T/R
***ineon SCT
Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor, TSLP-3-10, RoHS
***ark
Transistor, Rf, Aec-Q101, Npn, Tslp3; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:2.6V; Transition Frequency Ft:-; Power Dissipation Pd:125Mw; Dc Collector Current:55Ma; Dc Current Gain Hfe:230Hfe; Rf Transistor Rohs Compliant: Yes
***ineon
Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor | Summary of Features: Low noise broadband NPN RF transistor based on Infineons reliable, high volume SiGe:C bipolar technology; High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness; Unique combination of high RF performance, robustness and ease of application circuit design; Low noise figure: NFmin = 0.95 dB at 2.4 GHz and 1.05 dB at 5.5 GHz, 1.8 V, 8 mA; High gain |S21|2 = 21.5 dB at 2.4 GHz and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA; OIP3 = 21.5 dBm at 2.4 GHz and 20.5 dBm at 5.5 GHz, 1.8 V, 20 mA; Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor); Low power consumption, ideal for mobile applications; Pb-free (RoHS compliant) and halogen free very small thin leadless plastic package; Qualification report according to AEC-Q101 available | Target Applications: Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA; Satellite navigation systems (e.g. GPS, GLONASS, COMPASS...) and satellite C-band LNB (1st and 2nd stage LNA); Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz; ISM bands up to 10 GHz; Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p
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Parte # Mfg. Descripción Valores Precio
BFR843EL3E6327XTSA1
DISTI # V72:2272_06391078		Infineon Technologies AGTrans RF BJT NPN 2.25V 0.055A Automotive T/R
RoHS: Compliant		14720
  • 6000:$0.2044
  • 3000:$0.2066
  • 1000:$0.2223
  • 500:$0.2607
  • 250:$0.2807
  • 100:$0.2838
  • 25:$0.4182
  • 10:$0.4239
  • 1:$0.4913
BFR843EL3E6327XTSA1
DISTI # BFR843EL3E6327XTSA1CT-ND		Infineon Technologies AGRF TRANS NPN 2.6V TSLP-3-10
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    BFR843EL3E6327XTSA1
    DISTI # BFR843EL3E6327XTSA1DKR-ND    		Infineon Technologies AGRF TRANS NPN 2.6V TSLP-3-10
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      BFR843EL3E6327XTSA1
      DISTI # BFR843EL3E6327XTSA1TR-ND      		Infineon Technologies AGRF TRANS NPN 2.6V TSLP-3-10
      RoHS: Compliant
      Min Qty: 15000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 15000:$0.1976
      BFR843EL3E6327XTSA1
      DISTI # 26195748      		Infineon Technologies AGTrans RF BJT NPN 2.25V 0.055A Automotive T/R
      RoHS: Compliant      		14720
      • 6000:$0.2042
      • 3000:$0.2063
      • 1000:$0.2219
      • 500:$0.2602
      • 250:$0.2802
      • 100:$0.2833
      • 31:$0.4172
      BFR843EL3E6327XTSA1
      DISTI # BFR843EL3E6327XTSA1      		Infineon Technologies AGTrans GP BJT NPN 2.25V 0.055A 3-Pin TSLP T/R - Tape and Reel (Alt: BFR843EL3E6327XTSA1)
      RoHS: Compliant
      Min Qty: 15000
      Container: Reel      		Americas - 0
      • 15000:$0.2099
      • 30000:$0.2029
      • 60000:$0.1949
      • 90000:$0.1889
      • 150000:$0.1859
      BFR843EL3E6327XTSA1
      DISTI # 34AC1363      		Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, TSLP3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:2.6V,Transition Frequency ft:-,Power Dissipation Pd:125mW,DC Collector Current:55mA,DC Current Gain hFE:230hFE,RF Transistor RoHS Compliant: Yes14855
      • 1:$0.6400
      • 10:$0.5290
      • 25:$0.4600
      • 50:$0.3920
      • 100:$0.3230
      • 250:$0.2980
      • 500:$0.2740
      • 1000:$0.2490
      BFR843EL3E6327XTSA1
      DISTI # 726-BFR843EL3E6327XT      		Infineon Technologies AGRF Bipolar Transistors RF BIP TRANSISTORS
      RoHS: Compliant      		13404
      • 1:$0.6400
      • 10:$0.5290
      • 100:$0.3230
      • 1000:$0.2490
      • 2500:$0.2130
      • 10000:$0.1980
      BFR843EL3E6327XTSA1Infineon Technologies AGRF Small Signal Bipolar Transistor, 0.055A I(C), 1-Element, X Band, Silicon, NPN
      RoHS: Compliant      		72500
      • 1000:$0.1800
      • 500:$0.1900
      • 100:$0.2000
      • 25:$0.2100
      • 1:$0.2300
      BFR843EL3E6327XTSA1
      DISTI # 2781222      		Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, TSLP3
      RoHS: Compliant      		14855
      • 5:£0.5660
      • 25:£0.5260
      • 100:£0.3060
      BFR843EL3E6327XTSA1
      DISTI # 2781222      		Infineon Technologies AGTRANSISTOR, RF, AEC-Q101, NPN, TSLP3
      RoHS: Compliant      		14855
      • 5:$0.7090
      • 25:$0.6180
      • 100:$0.5040
      • 250:$0.4250
      • 500:$0.3680
      • 1000:$0.3480
      • 5000:$0.3300
      BFR843EL3E6327XTSA1
      DISTI # C1S322000647341      		Infineon Technologies AGTrans RF BJT NPN 2.25V 0.055A 125mW Automotive 3-Pin TSLP T/R
      RoHS: Compliant      		14720
      • 250:$0.2802
      • 100:$0.2833
      • 25:$0.4172
      • 10:$0.4229
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      MAAM-011229-TR1000

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      Mfr.#: NSVR351SDSA3T1G

      OMO.#: OMO-NSVR351SDSA3T1G

      		 Schottky Diodes & Rectifiers SBD SERIES 30MA 5V
      GJM0335C1E5R1CB01D

      Mfr.#: GJM0335C1E5R1CB01D

      OMO.#: OMO-GJM0335C1E5R1CB01D

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 5.1pF 25Volts C0G +/-0.25pF
      GRM0335C1E4R3BA01D

      Mfr.#: GRM0335C1E4R3BA01D

      OMO.#: OMO-GRM0335C1E4R3BA01D

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 4.3pF 25volts C0G +/-0.1pF
      MAAM-011229-TR1000

      Mfr.#: MAAM-011229-TR1000

      OMO.#: OMO-MAAM-011229-TR1000-MACOM

      		 IC RF AMP 50MHZ-4GHZ 8DFN
      GJM0335C1E5R1CB01D

      Mfr.#: GJM0335C1E5R1CB01D

      OMO.#: OMO-GJM0335C1E5R1CB01D-MURATA-ELECTRONICS

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 5.1pF 25Volts C0G +/-0.25pF
      GJM0335C1E6R2CB01D

      Mfr.#: GJM0335C1E6R2CB01D

      OMO.#: OMO-GJM0335C1E6R2CB01D-MURATA-ELECTRONICS

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 6.2pF 25Volts C0G +/-0.25pF
      GRM0335C1E681JA01D

      Mfr.#: GRM0335C1E681JA01D

      OMO.#: OMO-GRM0335C1E681JA01D-MURATA-ELECTRONICS

      		 Cap Ceramic 680pF 25V C0G 5% Pad SMD 0201 125C T/R
      NSVR351SDSA3T1G

      Mfr.#: NSVR351SDSA3T1G

      OMO.#: OMO-NSVR351SDSA3T1G-ON-SEMICONDUCTOR

      		 SBD SERIES 30MA 5V
      GRM0335C1E4R3BA01D

      Mfr.#: GRM0335C1E4R3BA01D

      OMO.#: OMO-GRM0335C1E4R3BA01D-MURATA-ELECTRONICS

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 4.3pF 25volts C0G +/-0.1pF
      Disponibilidad
      Valores:
      Available
      En orden:
      1993
      Ingrese la cantidad:
      El precio actual de BFR843EL3E6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,64 US$
      0,64 US$
      10
      0,53 US$
      5,29 US$
      100
      0,32 US$
      32,30 US$
      1000
      0,25 US$
      249,00 US$
      2500
      0,21 US$
      532,50 US$
      10000
      0,20 US$
      1 980,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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