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IRGR4607DPBF

IRGR4607DPBF
Mfr. #:
IRGR4607DPBF
Fabricante:
Infineon / IR
Descripción:
IGBT Transistors 600V TRENCH ULTRAFAST IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRGR4607DPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
DPAK-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.75 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
11 A
Pd - Disipación de energía:
58 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
11 A
Marca:
Infineon / IR
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
75
Subcategoría:
IGBT
Parte # Alias:
SP001546134
Unidad de peso:
0.012346 oz
Tags
IRGR460, IRGR46, IRGR4, IRGR, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 11A 3-Pin(2+Tab) DPAK Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA
*** Electronic Components
IGBT Transistors 600V TRENCH IGBT ULTRAFAST
***ark
Tape And Reel / G6, 600V, 7A, Dpakcopak Trr
***ment14 APAC
IGBT, SINGLE, 600V, 11A, TO-252
***S
French Electronic Distributor since 1988
***nell
IGBT, SINGLE, 600V, 11A, TO-252; DC Collector Current: 11A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 58W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins:
***ow.cn
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R
***ark
Igbt, Single, 600V, 12A, To-252; Dc Collector Current:12A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:100W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-252; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Washing machines; General purpose inverters; Aircon compressors; Hard switching topologies up to 1.0kW
***ical
Trans IGBT Chip N-CH 600V 14A 38000mW 3-Pin(2+Tab) DPAK T/R
***-Wing Technology
Tube Surface Mount ROHS3Compliant IGBT Transistor 1.8V @ 15V 8A 14A 38W 28ns
***ark
TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,14A I(C),TO-252AA
***nell
IGBT, COPAK, D-PAK; DC Collector Current: 14A; Collector Emitter Saturation Voltage Vce(on): 1.1V; Power Dissipation Pd: 38W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operati
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IGBT Transistors IGBT PRODUCTS
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DISCRETE IGBT WITHOUT ANTI-PARAL
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Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 5 A high speed
***ure Electronics
H Series 600 V 10 A SMT Trench Gate Field-Stop IGBT - TO-252
***nell
IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 83W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ernational Rectifier
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:8.5A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:38W; Package/Case:TO-252AA ;RoHS Compliant: Yes
***nell
IGBT, 600V, 8.5A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:8.5A; Voltage, Vce Sat Max:2.6V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:34A; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:180ns; Time, Rise:11ns; Transistors, No. of:1
***et
Trans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) DPAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA
***ser
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***Yang
Trans IGBT Chip N-CH 600V 8.5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel
***ernational Rectifier
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package
***ineon
Target Applications: Air Conditioner; Dishwasher; Dryer; Fan; Pump; Refridgeration; Washing Machine
***ark
Single Igbt, 600V, 8.5A, D-Pak
*** Electronic Components
IGBT Transistors 600V UltraFast 8-60kHz
***or
ULTRAFAST COPACK IGBT W/ULTRAFAS
***ernational Rectifier
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
***ical
Trans IGBT Chip N-CH 600V 9A 38000mW 3-Pin(2+Tab) DPAK
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:9A; Collector Emitter Saturation Voltage, Vce(sat):2.62V; Power Dissipation, Pd:38W; Package/Case:D-PAK ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
IRGR4607DPBF
DISTI # IRGR4607DPBF-ND		Infineon Technologies AGIGBT 600V 11A 58W DPAK
RoHS: Compliant
Min Qty: 375
Container: Tube		Limited Supply - Call
    IRGR4607DPBFInternational RectifierInsulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA
    RoHS: Not Compliant    		19350
    • 1000:$0.7900
    • 500:$0.8300
    • 100:$0.8700
    • 25:$0.9000
    • 1:$0.9700
    IRGR4607DPBF
    DISTI # 942-IRGR4607DPBF    		Infineon Technologies AGIGBT Transistors 600V TRENCH ULTRAFAST IGBT
    RoHS: Compliant    		346
    • 1:$1.7600
    • 10:$1.4900
    • 100:$1.1900
    • 500:$1.0400
    • 1000:$0.8680
    • 2500:$0.8050
    • 5000:$0.7760
    • 10000:$0.7170
    IRGR4607DPBFInternational Rectifier 220
      IRGR4607DPBF
      DISTI # IRGR4607DPBF      		Infineon Technologies AGTransistor: IGBT,600V,11A,58W,DPAK214
      • 1:$1.6400
      • 5:$1.4500
      • 25:$1.1200
      • 75:$0.9500
      IRGR4607DPBFInternational Rectifier 
      RoHS: Compliant      		Europe - 525
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        Mfr.#: IRGR4607DPBF

        OMO.#: OMO-IRGR4607DPBF-INFINEON-TECHNOLOGIES

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        Disponibilidad
        Valores:
        Available
        En orden:
        3500
        Ingrese la cantidad:
        El precio actual de IRGR4607DPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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