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KSC5603DTU

KSC5603DTU
Mfr. #:
KSC5603DTU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
Bipolar Transistors - BJT NPN Sil Planar Sil
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
KSC5603DTU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Polaridad del transistor:
NPN
Configuración:
Único
Voltaje colector-emisor VCEO Max:
800 V
Colector- Voltaje base VCBO:
1.6 kV
Emisor- Voltaje base VEBO:
12 V
Voltaje de saturación colector-emisor:
0.5 V
Corriente máxima del colector de CC:
3 A
Producto de ganancia de ancho de banda fT:
5 MHz
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
KSC5603D
Ganancia de corriente CC hFE Max:
35
Altura:
9.4 mm
Longitud:
10.1 mm
Embalaje:
Tubo
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
3 A
Colector de CC / Ganancia base hfe Min:
20
Pd - Disipación de energía:
100 W
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
1000
Subcategoría:
Transistores
Parte # Alias:
KSC5603DTU_NL
Unidad de peso:
0.063493 oz
Tags
KSC56, KSC5, KSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
KSC5603D Series 800 V 3 A Through Hole NPN Silicon Transistor - TO-220-3
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Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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Transistor,bjt,npn,800V V(Br)Ceo,3A I(C),to-220 Rohs Compliant: Yes
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Trans GP BJT NPN 800V 3A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube
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Transistor, NPN, 800V, 3A, TO-220-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:800V; Transition Frequency ft:5MHz; Power
***nell
TRANSISTOR, NPN, 800V, 3A, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 800V; Transition Frequency ft: 5MHz; Power Dissipation Pd: 100W; DC Collector Current: 3A; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
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The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC™ switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance. The FJP2145 provides exceptional reliability and a large operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a highvoltage TO-220 package.
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TRANSISTOR, NPN, 800V, 3A, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 800V; Transition Frequency ft: 15MHz; Power Dissipation Pd: 50W; DC Collector Current: 3A; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
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Parte # Mfg. Descripción Valores Precio
KSC5603DTU
DISTI # V79:2366_17786775		ON SemiconductorNPN/3A/1600V TO-2203
  • 1000:$0.6784
  • 500:$0.8530
  • 100:$0.9603
  • 10:$1.2411
  • 1:$1.5827
KSC5603DTU
DISTI # V36:1790_06359892		ON SemiconductorNPN/3A/1600V TO-2200
    KSC5603DTU
    DISTI # KSC5603DTU-ND    		ON SemiconductorTRANS NPN 800V 3A TO-220
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		3891In Stock
    • 5000:$0.6469
    • 3000:$0.6793
    • 1000:$0.7278
    • 100:$1.1160
    • 25:$1.3584
    • 10:$1.4310
    • 1:$1.6000
    KSC5603DTU
    DISTI # 33149996    		ON SemiconductorNPN/3A/1600V TO-22017000
    • 10000:$0.5861
    • 2000:$0.6089
    • 1000:$0.6871
    KSC5603DTU
    DISTI # KSC5603DTU    		ON SemiconductorTrans GP BJT NPN 800V 3A 3-Pin(3+Tab) TO-220 Rail (Alt: KSC5603DTU)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
      KSC5603DTU
      DISTI # KSC5603DTU      		ON SemiconductorTrans GP BJT NPN 800V 3A 3-Pin(3+Tab) TO-220 Rail - Bulk (Alt: KSC5603DTU)
      RoHS: Compliant
      Min Qty: 455
      Container: Bulk      		Americas - 0
      • 4550:$0.6789
      • 2275:$0.6959
      • 1365:$0.7049
      • 910:$0.7139
      • 455:$0.7179
      KSC5603DTU
      DISTI # KSC5603DTU      		ON SemiconductorTrans GP BJT NPN 800V 3A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: KSC5603DTU)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tube      		Americas - 0
      • 10000:$0.6109
      • 5000:$0.6269
      • 3000:$0.6349
      • 2000:$0.6429
      • 1000:$0.6469
      KSC5603DTU
      DISTI # 46AC0932      		ON SemiconductorTRANSISTOR, NPN, 800V, 3A, TO-220-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:800V,Transition Frequency ft:5MHz,Power Dissipation Pd:100W,DC Collector Current:3A,DC Current Gain hFE:20hFE,Transistor Case RoHS Compliant: Yes563
      • 10000:$0.7270
      • 2500:$0.7510
      • 1000:$0.8330
      • 500:$1.0200
      • 100:$1.1400
      • 10:$1.4600
      • 1:$1.6800
      KSC5603DTU
      DISTI # 512-KSC5603DTU      		ON SemiconductorBipolar Transistors - BJT NPN Sil Planar Sil
      RoHS: Compliant      		1195
      • 1:$1.5200
      • 10:$1.3000
      • 100:$0.9940
      • 500:$0.8790
      • 1000:$0.6940
      KSC5603DTUFairchild Semiconductor CorporationPower Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
      RoHS: Compliant      		1649
      • 1000:$0.7200
      • 500:$0.7600
      • 100:$0.7900
      • 25:$0.8300
      • 1:$0.8900
      KSC5603DTU
      DISTI # 2825107      		ON SemiconductorTRANSISTOR, NPN, 800V, 3A, TO-220-3
      RoHS: Compliant      		563
      • 500:$0.9740
      • 250:$1.1900
      • 100:$1.4400
      • 25:$2.1200
      • 5:$2.4700
      KSC5603DTU
      DISTI # 2825107      		ON SemiconductorTRANSISTOR, NPN, 800V, 3A, TO-220-3563
      • 500:£0.6840
      • 250:£0.7290
      • 100:£0.7730
      • 25:£1.0200
      • 5:£1.1200
      Imagen Parte # Descripción
      ZTX694B

      Mfr.#: ZTX694B

      OMO.#: OMO-ZTX694B

      		 Bipolar Transistors - BJT NPN Super E-Line
      ZTX795A

      Mfr.#: ZTX795A

      OMO.#: OMO-ZTX795A

      		 Bipolar Transistors - BJT PNP Super E-Line
      KSC1845FTA

      Mfr.#: KSC1845FTA

      OMO.#: OMO-KSC1845FTA

      		 Bipolar Transistors - BJT NPN Epitaxial Sil
      1N4148

      Mfr.#: 1N4148

      OMO.#: OMO-1N4148

      		 Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
      LG R971-KN-1

      Mfr.#: LG R971-KN-1

      OMO.#: OMO-LG-R971-KN-1

      		 Standard LEDs - SMD Green, 570nm 26mcd, 20mA
      860010473011

      Mfr.#: 860010473011

      OMO.#: OMO-860010473011

      		 Aluminum Electrolytic Capacitors - Radial Leaded WCAP-ATG8 25V 220uF 20% ESR=588mOhms
      575002B00000G

      Mfr.#: 575002B00000G

      OMO.#: OMO-575002B00000G

      		 Heat Sinks Channel Style Stamped Heatsink with Two Integrated Tabs for TO-220, Vertical Mounting, 13.6 n Thermal Resistance, Black Anodized, 3.10mm Hole
      LG R971-KN-1

      Mfr.#: LG R971-KN-1

      OMO.#: OMO-LG-R971-KN-1-OSRAM-OPTO-SEMICONDUCTORS

      		 Standard LEDs - SMD Green, 570nm 26mcd, 20mA
      575002B00000G

      Mfr.#: 575002B00000G

      OMO.#: OMO-575002B00000G-AAVID-THERMALLOY

      		 Heat Sink Passive TO-220 Thru-Hole 13.6C/W Black Anodized
      ZTX795A

      Mfr.#: ZTX795A

      OMO.#: OMO-ZTX795A-DIODES

      		 Bipolar Transistors - BJT PNP Super E-Line
      Disponibilidad
      Valores:
      Available
      En orden:
      1984
      Ingrese la cantidad:
      El precio actual de KSC5603DTU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,52 US$
      1,52 US$
      10
      1,30 US$
      13,00 US$
      100
      0,99 US$
      99,40 US$
      500
      0,88 US$
      439,50 US$
      1000
      0,69 US$
      694,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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