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BSZ050N03MS G

BSZ050N03MS G
Mfr. #:
BSZ050N03MS G
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSZ050N03MS G Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
BSZ050N03MS G más información
Atributo del producto
Valor de atributo
Fabricante
INFINEON
categoria de producto
Chips de IC
Serie
OptiMOS 3M
embalaje
Carrete
Alias ​​de parte
BSZ050N03MSGATMA1 BSZ050N03MSGXT SP000311518
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
TSDSON-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente triple de drenaje cuádruple simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
2.1 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
3.2 ns
Hora de levantarse
4.2 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
15 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
4.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
26 ns
Tiempo de retardo de encendido típico
6.7 ns
Modo de canal
Mejora
Tags
BSZ050N03MSG, BSZ050N03MS, BSZ050N03M, BSZ050N, BSZ050, BSZ05, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descripción Valores Precio
BSZ050N03MSGATMA1
DISTI # V72:2272_06390906		Infineon Technologies AGTrans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
RoHS: Compliant		8844
  • 6000:$0.3841
  • 3000:$0.3881
  • 1000:$0.3922
  • 500:$0.4848
  • 250:$0.6379
  • 100:$0.6450
  • 25:$0.8132
  • 10:$0.8226
  • 1:$0.9318
BSZ050N03MSGATMA1
DISTI # BSZ050N03MSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		553In Stock
  • 1000:$0.4305
  • 500:$0.5382
  • 100:$0.7266
  • 10:$0.9420
  • 1:$1.0800
BSZ050N03MSGATMA1
DISTI # BSZ050N03MSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		553In Stock
  • 1000:$0.4305
  • 500:$0.5382
  • 100:$0.7266
  • 10:$0.9420
  • 1:$1.0800
BSZ050N03MSGATMA1
DISTI # BSZ050N03MSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.3527
BSZ050N03MSGATMA1
DISTI # 31274178		Infineon Technologies AGTrans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
RoHS: Compliant		8844
  • 6000:$0.3841
  • 3000:$0.3881
  • 1000:$0.3922
  • 500:$0.4848
  • 250:$0.6379
  • 100:$0.6450
  • 25:$0.8132
  • 19:$0.8226
BSZ050N03MS G
DISTI # BSZ050N03MS G		Infineon Technologies AGTrans MOSFET N-CH 30V 15A 8-Pin TSDSON T/R (Alt: BSZ050N03MS G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 5000:$0.2429
  • 10000:$0.2361
  • 15000:$0.2297
  • 25000:$0.2237
  • 50000:$0.2208
  • 125000:$0.2180
  • 250000:$0.2152
BSZ050N03MS G
DISTI # SP000311518		Infineon Technologies AGTrans MOSFET N-CH 30V 15A 8-Pin TSDSON T/R (Alt: SP000311518)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.4379
  • 10000:€0.3769
  • 20000:€0.3209
  • 30000:€0.2749
  • 50000:€0.2609
BSZ050N03MSGATMA1
DISTI # BSZ050N03MSGATMA1		Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON-8 - Tape and Reel (Alt: BSZ050N03MSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2729
  • 10000:$0.2629
  • 20000:$0.2539
  • 30000:$0.2449
  • 50000:$0.2409
BSZ050N03MSGATMA1
DISTI # SP000311518		Infineon Technologies AGMOSFET N-CH 30V 40A TSDSON-8 (Alt: SP000311518)
RoHS: Compliant
Min Qty: 5000		Europe - 0
  • 5000:€0.3669
  • 10000:€0.2999
  • 20000:€0.2749
  • 30000:€0.2539
  • 50000:€0.2359
BSZ050N03MSGInfineon Technologies AGPower Field-Effect Transistor, 40A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		942
  • 1000:$0.3200
  • 500:$0.3300
  • 100:$0.3500
  • 25:$0.3600
  • 1:$0.3900
BSZ050N03MSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 40A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		5000
  • 1000:$0.3000
  • 500:$0.3200
  • 100:$0.3300
  • 25:$0.3500
  • 1:$0.3700
BSZ050N03MS G
DISTI # 726-BSZ050N03MSG		Infineon Technologies AGMOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
RoHS: Compliant		4618
  • 1:$0.8900
  • 10:$0.7370
  • 100:$0.4750
  • 1000:$0.3800
  • 5000:$0.3210
BSZ050N03MSGATMA1
DISTI # 8275246P		Infineon Technologies AGMOSFET N-CH 15A 30V OPTIMOS3 TSDSON8EP, RL1775
  • 125:£0.3950
  • 500:£0.3560
  • 1250:£0.3170
BSZ050N03MS GInfineon Technologies AG 100
    BSZ050N03MSGInfineon Technologies AG 112
      Imagen Parte # Descripción
      BSZ0503NSIATMA1

      Mfr.#: BSZ0503NSIATMA1

      OMO.#: OMO-BSZ0503NSIATMA1

      		 MOSFET LV POWER MOS
      BSZ0502NSIATMA1

      Mfr.#: BSZ0502NSIATMA1

      OMO.#: OMO-BSZ0502NSIATMA1

      		 MOSFET LV POWER MOS
      BSZ050N03LSGATMA1

      Mfr.#: BSZ050N03LSGATMA1

      OMO.#: OMO-BSZ050N03LSGATMA1

      		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
      BSZ0500NSI

      Mfr.#: BSZ0500NSI

      OMO.#: OMO-BSZ0500NSI-1190

      		 N-CH 30V 40A 1,500mOhm TSDSON-8
      BSZ0500NSIATMA1

      Mfr.#: BSZ0500NSIATMA1

      OMO.#: OMO-BSZ0500NSIATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 30A 8SON
      BSZ0506NS ..

      Mfr.#: BSZ0506NS ..

      OMO.#: OMO-BSZ0506NS--1190

      		 Nuevo y original
      BSZ050N03LSG

      Mfr.#: BSZ050N03LSG

      OMO.#: OMO-BSZ050N03LSG-1190

      		 Nuevo y original
      BSZ050N03MSG

      Mfr.#: BSZ050N03MSG

      OMO.#: OMO-BSZ050N03MSG-1190

      		 Power Field-Effect Transistor, 40A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      BSZ0501NSIATMA1

      Mfr.#: BSZ0501NSIATMA1

      OMO.#: OMO-BSZ0501NSIATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 25A 8SON
      BSZ050N03LSGATMA1-CUT TAPE

      Mfr.#: BSZ050N03LSGATMA1-CUT TAPE

      OMO.#: OMO-BSZ050N03LSGATMA1-CUT-TAPE-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de BSZ050N03MS G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,48 US$
      0,48 US$
      10
      0,46 US$
      4,57 US$
      100
      0,43 US$
      43,34 US$
      500
      0,41 US$
      204,65 US$
      1000
      0,39 US$
      385,20 US$
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