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SGF80N60UFTU

SGF80N60UFTU
Mfr. #:
SGF80N60UFTU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors Discrete Hi-P IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SGF80N60UFTU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-3PF-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje máximo del emisor de puerta:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
SGF80N60UF
Embalaje:
Tubo
Corriente continua de colector Ic Max:
80 A
Altura:
16.7 mm
Longitud:
15.7 mm
Ancho:
5.7 mm
Marca:
ON Semiconductor / Fairchild
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
360
Subcategoría:
IGBT
Unidad de peso:
0.245577 oz
Tags
SGF80, SGF8, SGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
***emi
Discrete, High Performance IGBT
*** Electronic Components
IGBT Transistors Discrete Hi-P IGBT
***nell
SGF80N60UFTU, SINGLE BIPOLAR TRANSISTORS;
***rchild Semiconductor
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
***ical
Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-3PF Rail
***el Electronic
FAIRCHILD SEMICONDUCTOR FGAF40N60UFTU IGBT Single Transistor, General Purpose, 40 A, 600 V, 100 W, 600 V, TO-3PF, 3 Pins
***nell
IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W
***th Star Micro
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Product Highlights: High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance
***ical
Trans IGBT Chip N=-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-3PF Rail
***hard Electronics
FAIRCHILD SEMICONDUCTOR FGAF40N60UFDTU IGBT Single Transistor, General Purpose, 40 A, 600 V, 100 W, 600 V, TO-3PF, 3 Pins
***nell
IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s Field Stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***ure Electronics
SGF23N60UF Series 600 V 23 A 75 W Through Hole PT IGBT - TO-3PF
***Yang
Trans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-3PF Rail - Rail/Tube
***r Electronics
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel
***i-Key
IGBT ULTRA FAST 600V 12A TO-3PF
***ark
Ptpigbt To3Pf 12A 600V Rohs Compliant: Yes
***i-Key Marketplace
INSULATED GATE BIPOLAR TRANSISTO
***rchild Semiconductor
Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters and PFC where High Speed Switching is required feature.
***ical
Trans IGBT Chip N=-CH 1500V 10A 62500mW 3-Pin(3+Tab) TO-3PF Rail
***nell
IGBT, 1.5KV, 10A, 150DEG C, 62.5W; Available until stocks are exhausted
***rchild Semiconductor
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the switching power supply applications.
Parte # Mfg. Descripción Valores Precio
SGF80N60UFTU
DISTI # 26885511		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 110000mW 3-Pin(3+Tab) TO-3PF Tube1440
  • 720:$5.2985
  • 360:$5.4641
SGF80N60UFTU
DISTI # SGF80N60UFTU-ND		ON SemiconductorIGBT 600V 80A 110W TO3PF
RoHS: Compliant
Min Qty: 360
Container: Tube		Limited Supply - Call
  • 360:$4.6496
SGF80N60UFTU
DISTI # SGF80N60UFTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail - Rail/Tube (Alt: SGF80N60UFTU)
RoHS: Compliant
Min Qty: 360
Container: Tube		Americas - 0
  • 360:$3.0900
  • 720:$2.9900
  • 1440:$2.9900
  • 2160:$2.9900
  • 3600:$2.8900
SGF80N60UFTU
DISTI # SGF80N60UFTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail (Alt: SGF80N60UFTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€4.0900
  • 10:€3.2900
  • 25:€3.1900
  • 50:€2.9900
  • 100:€2.8900
  • 500:€2.8900
  • 1000:€2.7900
SGF80N60UFTU
DISTI # 512-SGF80N60UFTU		ON SemiconductorIGBT Transistors Discrete Hi-P IGBT
RoHS: Compliant		0
    SGF80N60UFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
    RoHS: Compliant    		23040
    • 1000:$5.5600
    • 500:$5.8500
    • 100:$6.0900
    • 25:$6.3500
    • 1:$6.8400
    Imagen Parte # Descripción
    SGF80N60UFTU

    Mfr.#: SGF80N60UFTU

    OMO.#: OMO-SGF80N60UFTU

    		 IGBT Transistors Discrete Hi-P IGBT
    SGF80N60UF

    Mfr.#: SGF80N60UF

    OMO.#: OMO-SGF80N60UF-1190

    		 Nuevo y original
    SGF80N60UF G80N60UF

    Mfr.#: SGF80N60UF G80N60UF

    OMO.#: OMO-SGF80N60UF-G80N60UF-1190

    		 Nuevo y original
    SGF80N60UFTUPBF

    Mfr.#: SGF80N60UFTUPBF

    OMO.#: OMO-SGF80N60UFTUPBF-1190

    		 Nuevo y original
    SGF80N60UFTU

    Mfr.#: SGF80N60UFTU

    OMO.#: OMO-SGF80N60UFTU-ON-SEMICONDUCTOR

    		 IGBT Transistors Discrete Hi-P IGBT
    Disponibilidad
    Valores:
    Available
    En orden:
    4000
    Ingrese la cantidad:
    El precio actual de SGF80N60UFTU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    360
    4,42 US$
    1 591,20 US$
    720
    4,03 US$
    2 901,60 US$
    1080
    3,51 US$
    3 790,80 US$
    2520
    3,38 US$
    8 517,60 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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