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MRF6V2150NR1

MRF6V2150NR1
Mfr. #:
MRF6V2150NR1
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors VHV6 150W
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MRF6V2150NR1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
MRF6V2150NR1 más información
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
E
Polaridad del transistor:
Canal N
Tecnología:
Si
Vds - Voltaje de ruptura de drenaje-fuente:
110 V
Ganar:
25 dB
Potencia de salida:
150 W
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-270-4
Embalaje:
Carrete
Configuración:
Single Dual Drain Dual Gate
Altura:
2.64 mm
Longitud:
17.58 mm
Frecuencia de operación:
220 MHz
Serie:
MRF6V2150N
Escribe:
RF Power MOSFET
Ancho:
9.07 mm
Marca:
NXP / Freescale
Modo de canal:
Mejora
Sensible a la humedad:
Yes
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 0.5 V, 12 V
Vgs th - Voltaje umbral puerta-fuente:
1.62 V
Parte # Alias:
935316842528
Unidad de peso:
0.058073 oz
Tags
MRF6V2150N, MRF6V21, MRF6V2, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    G***r
    G***r
    LV

    Packing is good. The parcel came very quickly

    2019-01-10
    C***t
    C***t
    TH

    Received. Thank you reseller.

    2019-06-22
***W
RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1736
*** Semiconductors SCT
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V, FM4F
*** Stop Electro
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270
***nell
RF FET, 110V, 450MHZ-10MHZ, TO-272WB; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 450MHz; Operating Frequency Max: 10MHz; RF Transistor Case: TO-270WB; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6V2150N Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes
***escale Semiconductor
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
***et
Power LDMOS Transistor N-Channel 110V 5-Pin TO-270 WB EP T/R
***ical
Trans RF MOSFET N-CH 110V 5-Pin TO-270 W T/R
***or
RF ULTRA HIGH FREQUENCY BAND, N-
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:4-TO-270 ;RoHS Compliant: Yes
***W
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
***nell
TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
***et
Transistor RF FET N-CH 110V 10MHz to 450MHz 2-Pin TO-272 T/R
*** Electronic Components
RF MOSFET Transistors VHV6 10W TO272-2N
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***hard Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***ical
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N-CH, 100V, 4.3A, TO-252AA
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No
MRF6Vx Lateral N-Ch Broadband RF Power MOSFETs
NXP's MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More
Parte # Mfg. Descripción Valores Precio
MRF6V2150NR1
DISTI # MRF6V2150NR1CT-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		884In Stock
  • 100:$52.5772
  • 10:$58.6290
  • 1:$62.4100
MRF6V2150NR1
DISTI # MRF6V2150NR1DKR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		884In Stock
  • 100:$52.5772
  • 10:$58.6290
  • 1:$62.4100
MRF6V2150NR1
DISTI # MRF6V2150NR1TR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		500In Stock
  • 500:$48.8424
MRF6V2150NR1
DISTI # MRF6V2150NR1		Avnet, Inc.Trans MOSFET N-CH 110V 5-Pin TO-270 WB EP T/R - Tape and Reel (Alt: MRF6V2150NR1)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$53.4900
  • 1000:$51.3900
  • 2000:$49.3900
  • 3000:$47.5900
  • 5000:$46.6900
MRF6V2150NR1
DISTI # 47M2188		NXP SemiconductorsRF MOSFET, N CHANNEL, 110V, TO-270, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:2.5mA,Power Dissipation Pd:150W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272 RoHS Compliant: Yes0
  • 1:$73.4500
MRF6V2150NR1
DISTI # 61AC0770		NXP SemiconductorsRF FET, 110V, 450MHZ-10MHZ, TO-272WB,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:450MHz,Operating Frequency Max:10MHz,RF Transistor Case:TO-270WB,No. of RoHS Compliant: Yes386
  • 1:$60.5200
  • 10:$57.5000
  • 25:$55.0900
  • 50:$53.0700
  • 100:$51.0500
  • 250:$48.8500
MRF6V2150NR1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270
RoHS: Compliant		1
  • 1000:$48.3200
  • 500:$50.8600
  • 100:$52.9500
  • 25:$55.2200
  • 1:$59.4700
MRF6V2150NR1
DISTI # 841-MRF6V2150NR1		NXP SemiconductorsRF MOSFET Transistors VHV6 150W
RoHS: Compliant		102
  • 1:$60.5200
  • 5:$58.7600
  • 10:$57.5000
  • 25:$55.0900
  • 100:$51.0500
  • 250:$48.8500
  • 500:$47.3800
MRF6V2150NR1
DISTI # MRF6V2150NR1		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 1:$61.4000
  • 10:$56.7500
  • 25:$55.0900
MRF6V2150NR1
DISTI # 2890604		NXP SemiconductorsRF FET, 110V, 450MHZ-10MHZ, TO-272WB
RoHS: Compliant		386
  • 1:$99.4800
  • 10:$93.4500
  • 100:$83.8100
MRF6V2150NR1
DISTI # 2890604		NXP SemiconductorsRF FET, 110V, 450MHZ-10MHZ, TO-272WB
RoHS: Compliant		386
  • 1:£45.7800
  • 5:£44.4600
  • 10:£41.6800
  • 50:£36.9500
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Disponibilidad
Valores:
437
En orden:
2420
Ingrese la cantidad:
El precio actual de MRF6V2150NR1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
60,52 US$
60,52 US$
5
58,76 US$
293,80 US$
10
57,50 US$
575,00 US$
25
55,09 US$
1 377,25 US$
100
51,05 US$
5 105,00 US$
250
48,85 US$
12 212,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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