QJD1210011

QJD1210011
Mfr. #:
QJD1210011
Fabricante:
Powerex Inc
Descripción:
MOSFET 2N-CH 1200V 100A SIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
QJD1210011 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
QJD12100, QJD12, QJD1, QJD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET 2N-CH 1200V 100A SIC
***hardson RFPD
SILICON CARBIDE MOSFETS
***ark
Mosfet, Dual N-Ch, 1.2Kv, 100A, Module; Transistor Polarity:dual N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.015Ohm; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
QJD1210011
DISTI # QJD1210011-ND
Powerex Power SemiconductorsMOSFET 2N-CH 1200V 100A SIC
RoHS: Compliant
Container: Bulk
Temporarily Out of Stock
    QJD1210011
    DISTI # 90W9554
    Powerex Power SemiconductorsMOSFET, DUAL N-CH, 1.2KV, 100A, MODULE,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes0
      QJD1210011
      DISTI # QJD1210011
      Powerex Power SemiconductorsSILICON CARBIDE MOSFETS
      RoHS: Not Compliant
      0
        Imagen Parte # Descripción
        QJD1210SA1

        Mfr.#: QJD1210SA1

        OMO.#: OMO-QJD1210SA1-POWEREX

        SILICON CARBIDE POWER TRANSISTORS/MODULES
        QJD1210012

        Mfr.#: QJD1210012

        OMO.#: OMO-QJD1210012-1190

        SILICON CARBIDE POWER TRANSISTORS/MODULES
        QJD1210010

        Mfr.#: QJD1210010

        OMO.#: OMO-QJD1210010-POWEREX

        MOSFET 2N-CH 1200V 100A SIC
        QJD1210011

        Mfr.#: QJD1210011

        OMO.#: OMO-QJD1210011-POWEREX

        MOSFET 2N-CH 1200V 100A SIC
        QJD1210SB1

        Mfr.#: QJD1210SB1

        OMO.#: OMO-QJD1210SB1-POWEREX

        MOD MOSFET 1200V 10A DUAL SIC
        Disponibilidad
        Valores:
        Available
        En orden:
        4000
        Ingrese la cantidad:
        El precio actual de QJD1210011 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,00 US$
        0,00 US$
        10
        0,00 US$
        0,00 US$
        100
        0,00 US$
        0,00 US$
        500
        0,00 US$
        0,00 US$
        1000
        0,00 US$
        0,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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