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SI4488DY-T1-GE3

SI4488DY-T1-GE3
Mfr. #:
SI4488DY-T1-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 150V 5.0A 3.1W 50mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4488DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SI4488DY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SI4488DY-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SO-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
1.56 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
3.5 A
Vds-Drain-Source-Breakdown-Voltage
150 V
Resistencia a la fuente de desagüe de Rds
50 mOhms
Polaridad del transistor
Canal N
Tags
SI4488DY-T, SI4488D, SI4488, SI448, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:5A; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,DIODE,150V,5A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.041ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4488DY-T1-GE3
DISTI # V72:2272_09216519		Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant		2972
  • 1000:$0.9829
  • 500:$1.1554
  • 250:$1.2707
  • 100:$1.3159
  • 25:$1.5285
  • 10:$1.6375
  • 1:$1.9008
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2160In Stock
  • 1000:$0.9839
  • 500:$1.1875
  • 100:$1.5268
  • 10:$1.9000
  • 1:$2.1000
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2160In Stock
  • 1000:$0.9839
  • 500:$1.1875
  • 100:$1.5268
  • 10:$1.9000
  • 1:$2.1000
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.8894
SI4488DY-T1-GE3
DISTI # 25790120		Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant		2972
  • 1000:$0.9829
  • 500:$1.1554
  • 250:$1.2707
  • 100:$1.3159
  • 25:$1.5286
  • 10:$1.6375
  • 7:$1.9008
SI4488DY-T1-GE3
DISTI # 31237008		Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant		2500
  • 2500:$0.8926
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4488DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5769
  • 5000:$0.5599
  • 10000:$0.5369
  • 15000:$0.5219
  • 25000:$0.5079
SI4488DY-T1-GE3
DISTI # 15R5041		Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.041ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:3.1W RoHS Compliant: Yes0
  • 1:$1.4300
  • 1000:$1.3500
  • 2000:$1.2800
  • 4000:$1.1500
  • 6000:$1.1100
  • 10000:$1.0700
SI4488DY-T1-GE3
DISTI # 23T8512		Vishay IntertechnologiesMOSFET Transistor, N Channel, 5 A, 150 V, 0.041 ohm, 10 V, 2 V RoHS Compliant: Yes2229
  • 1:$2.3200
  • 10:$1.9300
  • 25:$1.7900
  • 50:$1.6400
  • 100:$1.5000
  • 250:$1.4100
  • 500:$1.3100
SI4488DY-T1-GE3
DISTI # 781-SI4488DY-GE3		Vishay IntertechnologiesMOSFET 150V Vds 20V Vgs SO-8
RoHS: Compliant		1460
  • 1:$2.3200
  • 10:$1.9300
  • 100:$1.5000
  • 500:$1.3100
  • 1000:$1.0900
  • 2500:$1.0100
SI4488DYT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3.5A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		Europe - 2500
    SI4488DY-T1-GE3
    DISTI # 1858958RL    		Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant    		0
    • 1:$3.3500
    • 10:$3.0300
    • 100:$2.4400
    • 500:$1.9000
    • 1000:$1.5700
    SI4488DY-T1-GE3
    DISTI # 1858958    		Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant    		2229
    • 1:$3.3500
    • 10:$3.0300
    • 100:$2.4400
    • 500:$1.9000
    • 1000:$1.5700
    SI4488DY-T1-GE3
    DISTI # C1S803600999653    		Vishay IntertechnologiesMOSFETs2972
    • 250:$1.2707
    • 100:$1.3159
    • 25:$1.5286
    • 10:$1.6375
    SI4488DY-T1-GE3
    DISTI # 1858958    		Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant    		2474
    • 5:£1.6100
    • 25:£1.4900
    • 100:£1.1500
    • 250:£1.0400
    • 500:£0.9380
    Imagen Parte # Descripción
    SI4488DY-T1-GE3

    Mfr.#: SI4488DY-T1-GE3

    OMO.#: OMO-SI4488DY-T1-GE3

    		 MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-E3

    Mfr.#: SI4488DY-T1-E3

    OMO.#: OMO-SI4488DY-T1-E3

    		 MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-GE3

    Mfr.#: SI4488DY-T1-GE3

    OMO.#: OMO-SI4488DY-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 150V 5.0A 3.1W 50mohm @ 10V
    SI4488DY-T1-E3-CUT TAPE

    Mfr.#: SI4488DY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4488DY-T1-E3-CUT-TAPE-1190

    		 Nuevo y original
    SI4488DY

    Mfr.#: SI4488DY

    OMO.#: OMO-SI4488DY-1190

    		 MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-E3

    Mfr.#: SI4488DY-T1-E3

    OMO.#: OMO-SI4488DY-T1-E3-VISHAY

    		 MOSFET N-CH 150V 3.5A 8-SOIC
    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de SI4488DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,76 US$
    0,76 US$
    10
    0,72 US$
    7,24 US$
    100
    0,69 US$
    68,57 US$
    500
    0,65 US$
    323,80 US$
    1000
    0,61 US$
    609,50 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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