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SI4408DY-T1-E3

SI4408DY-T1-E3
Mfr. #:
SI4408DY-T1-E3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 20V 14A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4408DY-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SI4408DY-T1-E3 más información
Atributo del producto
Valor de atributo
Fabricante
10VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SI4408DY-E3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SO-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
3.5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
26 ns
Hora de levantarse
42 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
21 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Resistencia a la fuente de desagüe de Rds
4.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
60 ns
Tiempo de retardo de encendido típico
42 ns
Transconductancia directa-Mín.
60 S
Modo de canal
Mejora
Tags
SI4408, Si440, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 20 V 0.0045 Ohms Surface Mount Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R / MOSFET N-CH 20V 14A 8-SOIC
***ied Electronics & Automation
MOSFET, Power,N-Ch,VDSS 20V,RDS(ON) 0.0035Ohm,ID 14A,SO-8,PD 1.6W,VGS+/-20V,-55C
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:21A; On Resistance Rds(On):0.0045Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4408DY-T1-E3
DISTI # V72:2272_09215561		Vishay IntertechnologiesTrans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R
RoHS: Compliant		1028
  • 1000:$1.6019
  • 500:$1.6290
  • 250:$1.6550
  • 100:$1.6820
  • 25:$1.8800
  • 10:$2.0890
  • 1:$2.5531
SI4408DY-T1-E3
DISTI # V36:1790_09215561		Vishay IntertechnologiesTrans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R
RoHS: Compliant		0
    SI4408DY-T1-E3
    DISTI # SI4408DY-T1-E3CT-ND    		Vishay SiliconixMOSFET N-CH 20V 14A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		4987In Stock
    • 1000:$1.1465
    • 500:$1.3837
    • 100:$1.6842
    • 10:$2.0950
    • 1:$2.3300
    SI4408DY-T1-E3
    DISTI # SI4408DY-T1-E3DKR-ND    		Vishay SiliconixMOSFET N-CH 20V 14A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		4987In Stock
    • 1000:$1.1465
    • 500:$1.3837
    • 100:$1.6842
    • 10:$2.0950
    • 1:$2.3300
    SI4408DY-T1-E3
    DISTI # SI4408DY-T1-E3TR-ND    		Vishay SiliconixMOSFET N-CH 20V 14A 8-SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		2500In Stock
    • 5000:$1.0235
    • 2500:$1.0363
    SI4408DY-T1-E3
    DISTI # 25789846    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R
    RoHS: Compliant    		1028
    • 1000:$1.7220
    • 500:$1.8264
    • 250:$1.9296
    • 100:$1.9769
    • 25:$2.3628
    • 10:$2.3779
    • 5:$2.8439
    SI4408DY-T1-E3
    DISTI # SI4408DY-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 14A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4408DY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$1.5385
    • 15000:$1.5810
    • 10000:$1.6260
    • 5000:$1.6949
    • 2500:$1.7467
    SI4408DY-T1-E3
    DISTI # 85W2147    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:3.5W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 500:$1.8900
    • 250:$2.3800
    • 100:$2.7400
    • 50:$3.0300
    • 25:$3.3000
    • 10:$3.5100
    • 1:$3.7500
    SI4408DY-T1-E3
    DISTI # 06J7685    		Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 21A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Product Range:- RoHS Compliant: Yes0
    • 20000:$1.4800
    • 12000:$1.5000
    • 8000:$1.5600
    • 4000:$1.6800
    • 2000:$1.8000
    • 1:$1.8900
    SI4408DY-T1-E3.
    DISTI # 15AC4254    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:1.6W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 20000:$1.4800
    • 12000:$1.5000
    • 8000:$1.5600
    • 4000:$1.6800
    • 2000:$1.8000
    • 1:$1.8900
    SI4408DY-T1-E3
    DISTI # 70026107    		Vishay SiliconixMOSFET,Power,N-Ch,VDSS 20V,RDS(ON) 0.0035Ohm,ID 14A,SO-8,PD 1.6W,VGS +/-20V,-55
    RoHS: Compliant    		0
    • 2500:$2.5160
    SI4408DY-T1-E3
    DISTI # 781-SI4408DY-T1-E3    		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4114DY-E3
    RoHS: Compliant    		4943
    • 1:$2.9700
    • 10:$2.4600
    • 100:$2.0300
    • 250:$1.9600
    SI4408DY-T1
    DISTI # 781-SI4408DY-T1    		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4114DY-E3
    RoHS: Compliant    		0
      SI4408DY-E3
      DISTI # 781-SI4408DY-E3      		Vishay IntertechnologiesMOSFET 20V 21A 3.5W
      RoHS: Compliant      		0
        SI4408DY-T1-E3Vishay Intertechnologies 2700
          SI4408DY-T1-E3Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4114DY-E3Americas -
            Imagen Parte # Descripción
            SI4408DY-T1-E3

            Mfr.#: SI4408DY-T1-E3

            OMO.#: OMO-SI4408DY-T1-E3

            		 MOSFET RECOMMENDED ALT 781-SI4114DY-E3
            SI4408DY-T1-GE3

            Mfr.#: SI4408DY-T1-GE3

            OMO.#: OMO-SI4408DY-T1-GE3

            		 MOSFET 20V 21A 3.5W 4.5mohm @ 10V
            SI4408DY-T1-GE3

            Mfr.#: SI4408DY-T1-GE3

            OMO.#: OMO-SI4408DY-T1-GE3-VISHAY

            		 RF Bipolar Transistors MOSFET 20V 21A 3.5W 4.5mohm @ 10V
            SI4408DY-T1-E3

            Mfr.#: SI4408DY-T1-E3

            OMO.#: OMO-SI4408DY-T1-E3-VISHAY

            		 MOSFET N-CH 20V 14A 8-SOIC
            SI4408DY

            Mfr.#: SI4408DY

            OMO.#: OMO-SI4408DY-1190

            		 MOSFET 20V 21A 3.5W
            Disponibilidad
            Valores:
            Available
            En orden:
            3000
            Ingrese la cantidad:
            El precio actual de SI4408DY-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
            Precio de referencia (USD)
            Cantidad
            Precio unitario
            Ext. Precio
            1
            1,54 US$
            1,54 US$
            10
            1,46 US$
            14,58 US$
            100
            1,38 US$
            138,18 US$
            500
            1,30 US$
            652,50 US$
            1000
            1,23 US$
            1 228,20 US$
            Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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