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IXTA76P10T

IXTA76P10T
Mfr. #:
IXTA76P10T
Fabricante:
IXYS
Descripción:
Darlington Transistors MOSFET -76 Amps -100V 0.024 Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTA76P10T Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTA76P10T DatasheetIXTA76P10T Datasheet (P4-P6)IXTA76P10T Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
FET - Single
Serie
TrenchP
embalaje
Tubo
Unidad de peso
0.056438 oz
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchP
Paquete-Estuche
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Paquete de dispositivo de proveedor
TO-263 (IXTA)
Tipo FET
Canal P MOSFET, óxido metálico
Potencia máxima
298W
Drenaje-a-fuente-voltaje-Vdss
100V
Entrada-Capacitancia-Ciss-Vds
13700pF @ 25V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
76A (Tc)
Rds-On-Max-Id-Vgs
25 mOhm @ 500mA, 10V
Vgs-th-Max-Id
4V @ 250μA
Puerta-Carga-Qg-Vgs
197nC @ 10V
Disipación de potencia Pd
298 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
20 ns
Hora de levantarse
40 ns
Vgs-Puerta-Fuente-Voltaje
15 V
Id-corriente-de-drenaje-continua
- 76 A
Vds-Drain-Source-Breakdown-Voltage
- 100 V
Vgs-th-Gate-Source-Threshold-Voltage
- 4 V
Resistencia a la fuente de desagüe de Rds
25 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
52 ns
Tiempo de retardo de encendido típico
25 ns
Qg-Gate-Charge
197 nC
Transconductancia directa-Mín.
35 S
Modo de canal
Mejora
Tags
IXTA76P, IXTA76, IXTA7, IXTA, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
P-Channel 100 V 298 W 197 nC TrenchP Power Mosfet Surface Mount - TO-263AA
***ark
Mosfet, P-Ch, 100V, 76A, To-263Aa Rohs Compliant: Yes
***roFlash
Power Field-Effect Transistor, 76A I(D), 100V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA
***emi
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ
***Yang
Trans MOSFET N-CH 100V 12A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***nell
MOSFET, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 9mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W
***r Electronics
Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 46 / Rise Time ns = 39 / Turn-OFF Delay Time ns = 96 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 245 / Power Dissipation (Pd) W = 310
***ark
Mosfet Transistor, N Channel, 75 A, 100 V, 7.2 Mohm, 10 V, 4 V
***ure Electronics
Single N-Channel 100 V 9 mOhm 83 nC HEXFET® Power Mosfet - D2PAK
*** Source Electronics
Trans MOSFET N-CH 100V 97A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 97A D2PAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***(Formerly Allied Electronics)
MOSFET; N Ch.; 100V; 97A; 9 MOHM; 83 NCQG; D2-PAK; Pb-Free
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 230 W
***el Electronic
Fixed LDO Voltage Regulator, 2.5V to 5.5V, 210mV Dropout, 3.3Vout, 1Aout, TSSOP-16
***nell
MOSFET, N, 100V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissi
*** Stop Electro
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
***ow.cn
Trans MOSFET N-CH Si 100V 59A Automotive 3-Pin(2+Tab) D2PAK Tube
***roFlash
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ment14 APAC
MOSFET, N CH, 100V, 59A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:59A; Power Dissipation Pd:160W; Voltage Vgs Max:20V
*** Source Electronics
Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 56A D2PAK
***emi
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
***ure Electronics
N-Channel 100 V 0.025 Ohm UltraFET Power Mosfet - TO-263AB
*** Stop Electro
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
***ical
Trans MOSFET N-CH 100V 59A Automotive 3-Pin(2+Tab) D2PAK T/R
***(Formerly Allied Electronics)
AUTOMOTIVE MOSFET, 100V 59.000A AUTO D2PAK
*** Electronic Components
IGBT Transistors MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms
***roFlash
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Transistor,mosfet,n-Channel,100V V(Br)Dss,56A I(D),to-263Ab Rohs Compliant: Yes
***emi
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
***r Electronics
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Parte # Mfg. Descripción Valores Precio
IXTA76P10T-TRL
DISTI # V72:2272_07431623		IXYS CorporationTRENCHP POWER MOSFET1214
  • 1000:$2.7460
  • 500:$2.9220
  • 250:$3.1340
  • 100:$3.3180
  • 25:$3.7010
  • 10:$3.8740
  • 1:$4.2460
IXTA76P10T
DISTI # V36:1790_07433758		IXYS CorporationTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
RoHS: Compliant		1027
  • 2500:$2.1600
  • 1000:$2.4790
  • 500:$2.8750
  • 250:$3.0299
  • 100:$3.4730
  • 50:$3.6160
  • 25:$3.7170
  • 10:$4.1760
  • 1:$4.5940
IXTA76P10T
DISTI # IXTA76P10T-ND		IXYS CorporationMOSFET P-CH 100V 76A TO-263
RoHS: Compliant
Min Qty: 1
Container: Tube		1043In Stock
  • 1000:$2.6950
  • 500:$3.1955
  • 100:$3.9463
  • 50:$4.3312
  • 1:$5.3900
IXTA76P10T-TRL
DISTI # 31232680		IXYS CorporationTRENCHP POWER MOSFET1214
  • 1000:$2.7460
  • 500:$2.9240
  • 250:$3.1349
  • 100:$3.3170
  • 25:$3.7030
  • 10:$3.8770
  • 3:$4.2590
IXTA76P10T
DISTI # 27146377		IXYS CorporationTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
RoHS: Compliant		1027
  • 1000:$2.4790
  • 500:$2.8750
  • 250:$3.0299
  • 100:$3.4730
  • 50:$3.6160
  • 25:$3.7170
  • 10:$4.1760
  • 3:$4.5940
IXTA76P10T
DISTI # 747-IXTA76P10T		IXYS CorporationMOSFET -76 Amps -100V 0.024 Rds
RoHS: Compliant		1140
  • 1:$5.6300
  • 10:$5.0300
  • 25:$4.3800
  • 50:$4.2900
  • 100:$4.1300
  • 250:$3.5200
  • 500:$3.3400
  • 1000:$2.8200
  • 2500:$2.4200
IXTA76P10T-TRL
DISTI # 747-IXTA76P10T-TRL		IXYS CorporationMOSFET -76 Amps -100V 0.024 Rds
RoHS: Compliant		0
  • 800:$2.8200
  • 2400:$2.4200
IXTA76P10T
DISTI # C1S331700027386		IXYS CorporationTrans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA
RoHS: Compliant		1027
  • 100:$3.4730
  • 50:$3.6160
  • 25:$3.7170
  • 10:$4.1760
  • 1:$4.5940
IXTA76P10T-TRL
DISTI # C1S331700094661		IXYS CorporationTRENCHP POWER MOSFET
RoHS: Compliant		1214
  • 250:$3.1349
  • 100:$3.3170
  • 25:$3.7030
  • 10:$3.8770
  • 1:$4.2590
Imagen Parte # Descripción
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Mfr.#: IXTA76N25TTRL

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IXTA70N085T

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OMO.#: OMO-IXTA70N085T-IXYS-CORPORATION

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Mfr.#: IXTA75N10P

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IXTA70N075T2

Mfr.#: IXTA70N075T2

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Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de IXTA76P10T es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,24 US$
3,24 US$
10
3,08 US$
30,78 US$
100
2,92 US$
291,60 US$
500
2,75 US$
1 377,00 US$
1000
2,59 US$
2 592,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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