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BSZ900N20NS3 G

BSZ900N20NS3 G
Mfr. #:
BSZ900N20NS3 G
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSZ900N20NS3 G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BSZ900N20NS3 G más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PG-TSDSON-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
15.2 A
Rds On - Resistencia de la fuente de drenaje:
90 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
8.7 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
62.5 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
3.3 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
3.3 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
8 S
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
10 ns
Tiempo típico de retardo de encendido:
5 ns
Parte # Alias:
BSZ900N20NS3GATMA1 BSZ9N2NS3GXT SP000781806
Unidad de peso:
0.003527 oz
Tags
BSZ900N2, BSZ9, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Parte # Mfg. Descripción Valores Precio
BSZ900N20NS3GATMA1
DISTI # V72:2272_06383706		Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R
RoHS: Compliant		4781
  • 3000:$0.7643
  • 1000:$0.8203
  • 500:$0.8925
  • 250:$1.0368
  • 100:$1.0460
  • 25:$1.1719
  • 10:$1.3021
  • 1:$1.6805
BSZ900N20NS3GATMA1
DISTI # V36:1790_06383706		Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R
RoHS: Compliant		0
  • 5000000:$0.6113
  • 2500000:$0.6114
  • 500000:$0.6125
  • 50000:$0.6137
  • 5000:$0.6139
BSZ900N20NS3GATMA1
DISTI # BSZ900N20NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4872In Stock
  • 1000:$0.8230
  • 500:$0.9932
  • 100:$1.2089
  • 10:$1.5040
  • 1:$1.6700
BSZ900N20NS3GATMA1
DISTI # BSZ900N20NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4872In Stock
  • 1000:$0.8230
  • 500:$0.9932
  • 100:$1.2089
  • 10:$1.5040
  • 1:$1.6700
BSZ900N20NS3GATMA1
DISTI # BSZ900N20NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 15.2A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 10000:$0.6980
  • 5000:$0.7164
BSZ900N20NS3GATMA1
DISTI # 32695623		Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$1.0750
BSZ900N20NS3GATMA1
DISTI # 31230047		Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R
RoHS: Compliant		4781
  • 9:$1.6923
BSZ900N20NS3 G
DISTI # BSZ900N20NS3 G		Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP (Alt: BSZ900N20NS3 G)
RoHS: Compliant
Min Qty: 5000		Asia - 0
  • 250000:$0.6643
  • 125000:$0.6728
  • 50000:$0.6816
  • 25000:$0.6905
  • 15000:$0.7092
  • 10000:$0.7289
  • 5000:$0.7497
BSZ900N20NS3GATMA1
DISTI # BSZ900N20NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ900N20NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.6659
  • 30000:$0.6779
  • 20000:$0.7019
  • 10000:$0.7279
  • 5000:$0.7559
BSZ900N20NS3GATMA1
DISTI # BSZ900N20NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON T/R - Bulk (Alt: BSZ900N20NS3GATMA1)
RoHS: Compliant
Min Qty: 532
Container: Bulk		Americas - 0
  • 5320:$0.5969
  • 2660:$0.6079
  • 1596:$0.6289
  • 1064:$0.6519
  • 532:$0.6769
BSZ900N20NS3GATMA1
DISTI # SP000781806		Infineon Technologies AGTrans MOSFET N-CH 200V 15.2A 8-Pin TSDSON T/R (Alt: SP000781806)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.6699
  • 30000:€0.7139
  • 20000:€0.7849
  • 10000:€0.8789
  • 5000:€1.1259
BSZ900N20NS3GATMA1
DISTI # 79X1341		Infineon Technologies AGMOSFET, N-CH, 200V, 15.2A, PG-TSDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:15.2A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes28
  • 1000:$0.7690
  • 500:$0.9280
  • 250:$0.9940
  • 100:$1.0600
  • 50:$1.1500
  • 25:$1.2400
  • 10:$1.3200
  • 1:$1.5600
BSZ900N20NS3GATMA1.
DISTI # 27AC1118		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:15.2A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:62.5W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 50000:$0.6660
  • 30000:$0.6780
  • 20000:$0.7020
  • 10000:$0.7280
  • 1:$0.7560
BSZ900N20NS3 G
DISTI # 726-BSZ900N20NS3G		Infineon Technologies AGMOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
RoHS: Compliant		2318
  • 1:$1.5400
  • 10:$1.3100
  • 100:$1.0500
  • 500:$0.9190
  • 1000:$0.7610
  • 2500:$0.7090
  • 5000:$0.6830
  • 10000:$0.6560
BSZ900N20NS3GATMA1
DISTI # 726-BSZ900N20NS3GATM		Infineon Technologies AGMOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
RoHS: Compliant		7907
  • 1:$1.5400
  • 10:$1.3100
  • 100:$1.0500
  • 500:$0.9190
  • 1000:$0.7610
  • 2500:$0.7090
  • 5000:$0.6830
  • 10000:$0.6560
BSZ900N20NS3GATMA1Infineon Technologies AGSingle N-Channel 200 V 90 mOhm 8.7 nC OptiMOS Power Mosfet - TSDSON-8
RoHS: Not Compliant		5000Reel
  • 5000:$0.6550
BSZ900N20NS3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 15.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Not Compliant		90
  • 1000:$0.6200
  • 500:$0.6500
  • 100:$0.6800
  • 25:$0.7100
  • 1:$0.7600
BSZ900N20NS3GATMA1
DISTI # 9064444P		Infineon Technologies AGMOSFET N-CH 200V 15.2A OPTIMOS TSDSON8EP, RL10
  • 2500:£0.5500
  • 1000:£0.5640
  • 500:£0.6550
  • 100:£0.7460
BSZ900N20NS3GATMA1
DISTI # 2432723		Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TSDSON-887
  • 500:£0.7160
  • 250:£0.7670
  • 100:£0.8170
  • 10:£1.0700
  • 1:£1.3600
BSZ900N20NS3GATMA1
DISTI # XSFP00000136212		Infineon Technologies AG 
RoHS: Compliant		10000 in Stock0 on Order
  • 10000:$0.8733
  • 5000:$0.9357
BSZ900N20NS3GATMA1
DISTI # 2432723RL		Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TSDSON-8
RoHS: Compliant		0
  • 5000:$1.0600
  • 2500:$1.1000
  • 1000:$1.1800
  • 500:$1.4100
  • 100:$1.6200
  • 10:$2.0100
  • 1:$2.3700
BSZ900N20NS3GATMA1
DISTI # 2432723		Infineon Technologies AGMOSFET, N CH, 200V, 15.2A, TSDSON-8
RoHS: Compliant		2
  • 5000:$1.0600
  • 2500:$1.1000
  • 1000:$1.1800
  • 500:$1.4100
  • 100:$1.6200
  • 10:$2.0100
  • 1:$2.3700
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Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de BSZ900N20NS3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,54 US$
1,54 US$
10
1,31 US$
13,10 US$
100
1,05 US$
105,00 US$
500
0,92 US$
459,50 US$
1000
0,76 US$
761,00 US$
2500
0,71 US$
1 772,50 US$
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