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IXGH50N90B2

IXGH50N90B2
Mfr. #:
IXGH50N90B2
Fabricante:
Littelfuse
Descripción:
IGBT Transistors 50 Amps 900V 2.7 Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXGH50N90B2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXGH50N90B2 DatasheetIXGH50N90B2 Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247AD-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
900 V
Voltaje máximo del emisor de puerta:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
IXGH50N90
Embalaje:
Tubo
Corriente continua de colector Ic Max:
75 A
Altura:
21.46 mm
Longitud:
16.26 mm
Ancho:
5.3 mm
Marca:
IXYS
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Unidad de peso:
0.229281 oz
Tags
IXGH50, IXGH5, IXGH, IXG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***k
    M***k
    RU

    The order came in the agreed time. Quality corresponds to the description, the price is good. Purchase satisfied. Seller recommend.

    2019-03-16
    V***v
    V***v
    RU

    To check really did not work because. In the power supply something is not working yet.

    2019-01-22
    M***g
    M***g
    ES

    As the seller is 100 pieces to me only 98, i and paid for 100.

    2019-05-24
    S***o
    S***o
    KZ

    Thank you

    2019-06-07
***i-Key
IGBT 900V 75A 400W TO247
***th Star Micro
IGBT 900V 75A TO-247
***S
new, original packaged
***el Nordic
Contact for details
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Trans IGBT Chip N-CH 900V 75A 337000mW 3-Pin(3+Tab) TO-247
***rochip
IGBT PT MOS 8 Combi 900 V 43 A TO-247
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Insulated Gate Bipolar Transistor, 78A I(C), 900V V(BR)CES, N-Channel, TO-247
***ark
IGBT PT MOS 8 COMBI 900 V 35 A TO-247 3 TO-247 TUBE ROHS COMPLIANT: YES
***et
Trans IGBT Chip N-CH 900V 63A 3-Pin(3+Tab) TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 63A I(C), 900V V(BR)CES, N-Channel, TO-247AD
***th Star Micro
Insulated Gate Bipolar Transistor - Power MOS 8
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Trans IGBT Chip N-CH 900V 63A 290000mW 3-Pin(3+Tab) TO-247 Tube
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IGBT PT MOS 8 Single 900 V 35 A TO-247
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Insulated Gate Bipolar Transistor, 63A I(C), 900V V(BR)CES, N-Channel, TO-247
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IGBT Transistors FG, IGBT, 900V, TO-247
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Trans IGBT Chip N-CH 900V 90A 500000mW 3-Pin(3+Tab) TO-247AD
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IXYH40N90C3D1 900 Vce 40 A 27 ns t(on) GenX3 High-Speed IGBT - TO-247-3
***el Electronic
IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT
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Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.25 V Current release time: 150 ns Power dissipation: 200 W
***nell
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ark
MOSFET; Transistor Type:MOSFET; Package/Case:TO-247AC; Power Dissipation, Pd:200W; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:51A; Mounting Type:Through Hole; Voltage Rating:900V ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WPbF; Fall Time Max:220ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V
***ure Electronics
GenX3™ XPT™ IGBT 900 V 105 A Flange Mount High-Speed IGBT - TO-247AD
***i-Key
IGBT 900V 105A 600W TO247
***el Electronic
IGBT Transistors GenX3 900V XPT IGBTs
Parte # Mfg. Descripción Valores Precio
IXGH50N90B2D1
DISTI # IXGH50N90B2D1-ND		IXYS CorporationIGBT 900V 75A 400W TO247AD
RoHS: Compliant
Min Qty: 1
Container: Tube		44In Stock
  • 1020:$4.8762
  • 510:$5.5986
  • 270:$6.1404
  • 120:$6.6822
  • 30:$7.4047
  • 10:$8.1270
  • 1:$9.0300
IXGH50N90B2
DISTI # IXGH50N90B2-ND		IXYS CorporationIGBT 900V 75A 400W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.9623
IXGH50N90B2D1
DISTI # 31153563		IXYS CorporationTrans IGBT Chip N-CH 900V 75A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		120
  • 30:$7.6400
IXGH50N90B2D1IXYS CorporationIXGH Series 900 Vce 75 A 20 ns t(on) HiPerFAST IGBT w/ Fast Diode - TO-247AD
RoHS: Compliant		210Tube
  • 5:$8.5800
  • 25:$6.9600
  • 100:$6.3700
IXGH50N90B2
DISTI # 747-IXGH50N90B2		IXYS CorporationIGBT Transistors 50 Amps 900V 2.7 Rds
RoHS: Compliant		0
  • 1:$7.2700
  • 10:$6.5400
  • 25:$5.9600
  • 50:$5.4500
  • 100:$5.3800
  • 250:$4.9000
  • 500:$4.5100
  • 1000:$3.9300
IXGH50N90B2D1
DISTI # 747-IXGH50N90B2D1		IXYS CorporationIGBT Transistors 50 Amps 900V 2.7 Rds
RoHS: Compliant		92
  • 1:$9.0300
  • 10:$8.1300
  • 25:$7.4100
  • 50:$6.7700
  • 100:$6.6800
  • 250:$6.0900
  • 500:$5.6000
  • 1000:$4.8800
IXGH50N90B2D1
DISTI # IXGH50N90B2D1		IXYS Corporation900V 75A 400W TO247AD
RoHS: Compliant		12
  • 1:€8.5500
  • 5:€5.5500
  • 30:€4.5500
  • 60:€4.4000
IXGH50N90B2D1
DISTI # XSFP00000012192		IXYS Corporation 
RoHS: Compliant		141
  • 30:$11.4400
  • 141:$10.7200
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OMO.#: OMO-IXGH50N60A-IXYS-CORPORATION

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OMO.#: OMO-IXGH50N60B-IXYS-CORPORATION

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IXGH56N60A3

Mfr.#: IXGH56N60A3

OMO.#: OMO-IXGH56N60A3-IXYS-CORPORATION

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IXGH50N120C3

Mfr.#: IXGH50N120C3

OMO.#: OMO-IXGH50N120C3-IXYS-CORPORATION

 IGBT Transistors 75Amps 1200V
IXGH50N90B2

Mfr.#: IXGH50N90B2

OMO.#: OMO-IXGH50N90B2-IXYS-CORPORATION

 IGBT Transistors 50 Amps 900V 2.7 Rds
IXGH50N90B2D1

Mfr.#: IXGH50N90B2D1

OMO.#: OMO-IXGH50N90B2D1-IXYS-CORPORATION

 IGBT Transistors 50 Amps 900V 2.7 Rds
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de IXGH50N90B2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
7,27 US$
7,27 US$
10
6,54 US$
65,40 US$
25
5,96 US$
149,00 US$
50
5,45 US$
272,50 US$
100
5,38 US$
538,00 US$
250
4,90 US$
1 225,00 US$
500
4,51 US$
2 255,00 US$
1000
3,93 US$
3 930,00 US$
2500
3,88 US$
9 700,00 US$
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