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BSC010N04LSIATMA1

BSC010N04LSIATMA1
Mfr. #:
BSC010N04LSIATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC010N04LSIATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
BSC010N04LSIATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TDSON-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
900 uOhms
Vgs th - Voltaje umbral puerta-fuente:
1.2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
122 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
139 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
1.27 mm
Longitud:
5.9 mm
Serie:
OptiMOS 5
Tipo de transistor:
1 N-Channel
Ancho:
5.15 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
130 S
Otoño:
17 ns
Tipo de producto:
MOSFET
Hora de levantarse:
48 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
72 ns
Tiempo típico de retardo de encendido:
22 ns
Parte # Alias:
BSC010N04LSI SP000953210
Tags
BSC010N0, BSC010, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***
N-Channel 4 V 37A (Ta), 1A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8 FL
***ineon SCT
New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications, SuperSO8, RoHS
***ark
MOSFET, N-CH, 40V, 100A, 150DEG C, 139W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 40V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 900µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
New 40V and 60V product families, feature not only the industrys lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. | Summary of Features: Optimized for synchronous rectification; 15% lower R DS(on) than alternative devices; 31% improvement of FOM over similar devices; Integrated Schottky-like diode; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
40V OptiMOS™ Power MOSFETs
Infineon's 40V OptiMOS Power MOSFETs feature 35% lower RDS(on) and 45% lower Figure of Merit (RDS(on) x Qg) compared to alternative devices. These devices are optimized for synchronous rectification in switched mode power supplies (SMPS) as well as a broad range of industrial applications such as motor control, solar micro inverters and fast switching DC/DC converters. In addition, this new generation of 40V devices offers higher switching frequencies and are enabled which results in even higher power density.  A monolithic integrated Schottky-like diode in the 40V SuperSO8 package (5mm x 6mm) leads to higher efficiency and a drastic reduction of the voltage overshoot. This in turn reduces the need for a snubber circuit and saves engineering effort and cost.Learn More
Parte # Mfg. Descripción Valores Precio
BSC010N04LSIATMA1
DISTI # V72:2272_06378523		Infineon Technologies AGTrans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R
RoHS: Compliant		2289
  • 1000:$1.8070
  • 500:$2.0690
  • 250:$2.2580
  • 100:$2.4530
  • 25:$2.7320
  • 10:$2.8849
  • 1:$3.1509
BSC010N04LSIATMA1
DISTI # BSC010N04LSIATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 37A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3699In Stock
  • 1000:$1.6476
  • 500:$1.9536
  • 100:$2.4125
  • 10:$2.9420
  • 1:$3.3000
BSC010N04LSIATMA1
DISTI # BSC010N04LSIATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 37A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3699In Stock
  • 1000:$1.6476
  • 500:$1.9536
  • 100:$2.4125
  • 10:$2.9420
  • 1:$3.3000
BSC010N04LSIATMA1
DISTI # BSC010N04LSIATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 37A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.4625
BSC010N04LSIATMA1
DISTI # 31006547		Infineon Technologies AGTrans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5000:$1.6573
BSC010N04LSIATMA1
DISTI # 30743587		Infineon Technologies AGTrans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R
RoHS: Compliant		2289
  • 1000:$1.8040
  • 500:$2.0650
  • 250:$2.2540
  • 100:$2.4480
  • 25:$2.7250
  • 10:$2.8790
  • 5:$3.1429
BSC010N04LSIATMA1
DISTI # BSC010N04LSIATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R - Tape and Reel (Alt: BSC010N04LSIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.3900
  • 10000:$1.3900
  • 20000:$1.2900
  • 30000:$1.2900
  • 50000:$1.2900
BSC010N04LSIATMA1
DISTI # 13AC8324		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):900µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation RoHS Compliant: Yes4456
  • 1:$3.9300
  • 10:$3.5400
  • 25:$3.3400
  • 50:$3.1500
  • 100:$2.9400
  • 250:$2.6800
  • 500:$2.4300
  • 1000:$2.0800
BSC010N04LSI
DISTI # 726-BSC010N04LSI		Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
RoHS: Compliant		238
  • 1:$2.7500
  • 10:$2.3400
  • 100:$2.0300
  • 250:$1.9300
  • 500:$1.7300
BSC010N04LSIATMA1
DISTI # 726-BSC010N04LSIATMA		Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
RoHS: Compliant		0
  • 1:$2.7500
  • 10:$2.3400
  • 100:$2.0300
  • 250:$1.9300
  • 500:$1.7300
BSC010N04LSIATMA1
DISTI # 2725801		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON
RoHS: Compliant		4458
  • 1:£3.7000
  • 10:£2.9300
  • 100:£2.4100
BSC010N04LSIATMA1
DISTI # 2725801		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON
RoHS: Compliant		4456
  • 1:$5.2700
  • 10:$4.6900
  • 100:$3.8500
  • 500:$3.1200
  • 1000:$2.6300
BSC010N04LSIATMA1
DISTI # C1S322000406993		Infineon Technologies AGTrans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R
RoHS: Compliant		2289
  • 250:$2.2540
  • 100:$2.4480
  • 25:$2.7250
  • 10:$2.8790
  • 1:$3.1429
BSC010N04LSIATMA1
DISTI # C1S322000318908		Infineon Technologies AGTrans MOSFET N-CH 40V 37A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5000:$1.4400
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Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de BSC010N04LSIATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,75 US$
2,75 US$
10
2,33 US$
23,30 US$
100
2,02 US$
202,00 US$
250
1,92 US$
480,00 US$
500
1,72 US$
860,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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