BSB012NE2LXIXUMA1

BSB012NE2LXIXUMA1
Mfr. #:
BSB012NE2LXIXUMA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSB012NE2LXIXUMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
OptiMOS
embalaje
Carrete
Alias ​​de parte
BSB012NE2LXI SP001034232
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
WDSON-2
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
57 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 40 C
Otoño
4.6 ns
Hora de levantarse
6 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
170 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Vgs-th-Gate-Source-Threshold-Voltage
1 V to 2 V
Resistencia a la fuente de desagüe de Rds
1.2 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
34 ns
Tiempo de retardo de encendido típico
5.7 ns
Qg-Gate-Charge
32 nC
Transconductancia directa-Mín.
180 S
Tags
BSB012NE, BSB012, BSB01, BSB0, BSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Metal Oxide Semiconductor Field Effect Transistor
***ineon SCT
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, MG-WDSON-2, RoHS
***ineon
With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Reduce power losses and increase efficiency for all load conditions; Save space with smallest packages like CanPAK, S3O8 or system in package solution; Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in | Target Applications: Onboard charger; Mainboard; Notebook; DC-DC; VRD/VRM; LED; Motor control
Parte # Mfg. Descripción Valores Precio
BSB012NE2LXIXUMA1
DISTI # BSB012NE2LXIXUMA1-ND
Infineon Technologies AGMOSFET N-CH 25V 170A WDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.9831
BSB012NE2LXIXUMA1
DISTI # SP001034232
Infineon Technologies AGTrans MOSFET N-CH 25V 37A 7-Pin WDSON T/R (Alt: SP001034232)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 10000
  • 5000:€0.9519
  • 10000:€0.7779
  • 20000:€0.7139
  • 30000:€0.6589
  • 50000:€0.6119
BSB012NE2LXIXUMA1
DISTI # BSB012NE2LXIXUMA1
Infineon Technologies AGTrans MOSFET N-CH 25V 37A 7-Pin WDSON T/R - Tape and Reel (Alt: BSB012NE2LXIXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.7919
  • 10000:$0.7629
  • 20000:$0.7359
  • 30000:$0.7109
  • 50000:$0.6979
BSB012NE2LXIXUMA1
DISTI # 726-BSB012NE2LXIXUMA
Infineon Technologies AGMOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
RoHS: Compliant
0
  • 1:$2.0300
  • 10:$1.7200
  • 100:$1.3800
  • 500:$1.2100
  • 1000:$0.9970
  • 2500:$0.9290
  • 5000:$0.8940
BSB012NE2LXI
DISTI # 726-BSB012NE2LXI
Infineon Technologies AGMOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
RoHS: Compliant
0
  • 1:$2.0300
  • 10:$1.7200
  • 100:$1.3800
  • 500:$1.2100
  • 1000:$0.9970
  • 2500:$0.9290
  • 5000:$0.8940
BSB012NE2LXIXUMA1Infineon Technologies AGPower Field-Effect Transistor
RoHS: Compliant
897
  • 1000:$0.7100
  • 500:$0.7500
  • 100:$0.7800
  • 25:$0.8100
  • 1:$0.8700
Imagen Parte # Descripción
BSB012NE2LXIXUMA1

Mfr.#: BSB012NE2LXIXUMA1

OMO.#: OMO-BSB012NE2LXIXUMA1

MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LXI

Mfr.#: BSB012NE2LXI

OMO.#: OMO-BSB012NE2LXI

MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LX

Mfr.#: BSB012NE2LX

OMO.#: OMO-BSB012NE2LX

MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LX5G

Mfr.#: BSB012NE2LX5G

OMO.#: OMO-BSB012NE2LX5G-1190

Nuevo y original
BSB012NE2LXI

Mfr.#: BSB012NE2LXI

OMO.#: OMO-BSB012NE2LXI-1190

MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LXXUMA1

Mfr.#: BSB012NE2LXXUMA1

OMO.#: OMO-BSB012NE2LXXUMA1-1190

Nuevo y original
BSB012NE2LX

Mfr.#: BSB012NE2LX

OMO.#: OMO-BSB012NE2LX-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
BSB012NE2LXIXUMA1

Mfr.#: BSB012NE2LXIXUMA1

OMO.#: OMO-BSB012NE2LXIXUMA1-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de BSB012NE2LXIXUMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,04 US$
1,04 US$
10
0,99 US$
9,91 US$
100
0,94 US$
93,87 US$
500
0,89 US$
443,30 US$
1000
0,83 US$
834,40 US$
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