SCTH90N65G2V-7

SCTH90N65G2V-7
Mfr. #:
SCTH90N65G2V-7
Fabricante:
STMicroelectronics
Descripción:
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SCTH90N65G2V-7 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SCTH90N65G2V-7 más información SCTH90N65G2V-7 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
SMD / SMT
Paquete / Caja:
H2PAK-7
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
90 A
Rds On - Resistencia de la fuente de drenaje:
26 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.9 V
Vgs - Voltaje puerta-fuente:
10 V to 22 V
Qg - Carga de puerta:
157 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
330 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
SCTH90N
Tipo de transistor:
1 N-Channel
Marca:
STMicroelectronics
Otoño:
16 ns
Tipo de producto:
MOSFET
Hora de levantarse:
38 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
58 ns
Tiempo típico de retardo de encendido:
26 ns
Tags
SCTH, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
650 Silicon-Carbide (SiC) MOSFETs
STMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures. SiC MOSFETs also feature excellent switching performance versus the best-in-class IGBTs in all temperature ranges. This simplifies the thermal design of power electronic systems.
Parte # Mfg. Descripción Valores Precio
SCTH90N65G2V-7
DISTI # V36:1790_18695152
STMicroelectronicsSCTH90N65G2V-70
  • 1000000:$35.1100
  • 500000:$35.1200
  • 100000:$39.3700
  • 10000:$50.6500
  • 1000:$52.8000
SCTH90N65G2V-7
DISTI # 497-18352-1-ND
STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    SCTH90N65G2V-7
    DISTI # 497-18352-6-ND
    STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      SCTH90N65G2V-7
      DISTI # 497-18352-2-ND
      STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
      RoHS: Compliant
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
        SCTH90N65G2V-7
        DISTI # SCTH90N65G2V-7
        STMicroelectronicsMOSFET 90A, 650V, 22mO (Alt: SCTH90N65G2V-7)
        RoHS: Compliant
        Min Qty: 1000
        Europe - 0
          SCTH90N65G2V-7
          DISTI # SCTH90N65G2V-7
          STMicroelectronicsMOSFET 90A, 650V, 22mO - Tape and Reel (Alt: SCTH90N65G2V-7)
          RoHS: Not Compliant
          Min Qty: 1000
          Container: Reel
          Americas - 0
          • 10000:$37.5900
          • 6000:$38.3900
          • 4000:$40.1900
          • 2000:$42.0900
          • 1000:$44.1900
          SCTH90N65G2V-7
          DISTI # 02AH6929
          STMicroelectronicsPTD WBG & POWER RF0
          • 1:$36.8800
          SCTH90N65G2V-7
          DISTI # 511-SCTH90N65G2V-7
          STMicroelectronicsMOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
          RoHS: Compliant
          0
          • 1:$52.8000
          • 5:$51.6200
          • 10:$49.2600
          • 25:$47.2000
          • 100:$42.7700
          • 250:$41.2900
          • 500:$36.4900
          Imagen Parte # Descripción
          SCTH90N65G2V-7

          Mfr.#: SCTH90N65G2V-7

          OMO.#: OMO-SCTH90N65G2V-7

          MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
          SCTH90N65G2V-7

          Mfr.#: SCTH90N65G2V-7

          OMO.#: OMO-SCTH90N65G2V-7-STMICROELECTRONICS

          SILICON CARBIDE POWER MOSFET 650
          Disponibilidad
          Valores:
          Available
          En orden:
          5500
          Ingrese la cantidad:
          El precio actual de SCTH90N65G2V-7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          52,80 US$
          52,80 US$
          5
          51,62 US$
          258,10 US$
          10
          49,26 US$
          492,60 US$
          25
          47,20 US$
          1 180,00 US$
          100
          42,77 US$
          4 277,00 US$
          250
          41,29 US$
          10 322,50 US$
          500
          36,49 US$
          18 245,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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