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IRF1405ZSPBF

IRF1405ZSPBF
Mfr. #:
IRF1405ZSPBF
Fabricante:
Infineon Technologies
Descripción:
Darlington Transistors MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF1405ZSPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF1405ZSPBF DatasheetIRF1405ZSPBF Datasheet (P4-P6)IRF1405ZSPBF Datasheet (P7-P9)IRF1405ZSPBF Datasheet (P10-P12)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IR
categoria de producto
FET - Single
embalaje
Tubo
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
230 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
82 ns
Hora de levantarse
110 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
150 A
Vds-Drain-Source-Breakdown-Voltage
55 V
Resistencia a la fuente de desagüe de Rds
4.9 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
48 ns
Tiempo de retardo de encendido típico
18 ns
Qg-Gate-Charge
120 nC
Modo de canal
Mejora
Tags
IRF1405ZS, IRF1405Z, IRF1405, IRF140, IRF14, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 55 V 4.9 mOhm 180 nC HEXFET® Power Mosfet - TO-262
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***Yang
Trans MOSFET N-CH 55V 150A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
N CHANNEL MOSFET, 55V, 75A, D2-PAK; Tran; N CHANNEL MOSFET, 55V, 75A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
*** Electronics
In a Tube of 50, IRF1010NSPBF N-Channel MOSFET, 85 A, 55 V HEXFET, 3-Pin D2PAK Infineon
***ure Electronics
Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
*** Source Electronics
Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 55V 85A D2PAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, 55V, 84A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dis
***icroelectronics
N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in D2PAK package
***ical
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:80A; Resistance, Rds On:0.0085ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination ;RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 80A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 80A; On State resistance @ Vgs = 10V: 8.5mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 320A; SMD Marking: 60N55F3; Termination Type: Surface Mount Device; Voltage Vds Typ: 55V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 60V, 57A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:92W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:57A; Junction to Case Thermal Resistance A:1.64°C/W; On State resistance @ Vgs = 10V:12mohm; Package / Case:D2-PAK; Power Dissipation Pd:92W; Power Dissipation Pd:92W; Pulse Current Idm:230A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ure Electronics
N-Channel 55 V 0.0065 Ohm Surface Mount STripFET™ II Power MosFet - D2PAK
***Yang
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ource
TRANSISTOR | MOSFET | N-CHANNEL | 55V VBRDSS | 80A ID | TO-263AB
***ark
MOSFET, N CHANNEL, 55V, 80A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***roFlash
Power Field-Effect Transistor, 80A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***icroelectronics
N-CHANNEL 55V 0.0065 OHM 80A D2PAK STRIPFET II MOSFET
***ical
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 55V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
***ical
Trans MOSFET N-CH 60V 84A 3-Pin (2+Tab) D2PAK
***ernational Rectifier
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
***(Formerly Allied Electronics)
MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET, N, 60V, 84A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:84A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:12mohm; Package / Case:D2-PAK; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***icroelectronics
N-channel 40 V, 3.1 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
*** Source Electronics
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 40V 80A D2PAK
***ure Electronics
STB120 Series 40 V 80 A 4 mOhm 110 W 80 nC N-Channel MOSFET - D2PAK
***r Electronics
Power Field-Effect Transistor, 80A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
MOSFET, N CH, 40V, 80A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Product Range:-RoHS Compliant: Yes
***ure Electronics
N-Channel 60 V 5 mohm Surface Mount PowerTrench® Mosfet - D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ
***Yang
Trans MOSFET N-CH 60V 18A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***et
TO-263AB, N-CHANNEL POWERTRENCH MOSFET 60V, 80A, 5MOHMS
***ment14 APAC
MOSFET, N-CH, 80A, 60V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:60V; On Resistance
***r Electronics
Power Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 80A, 60V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 245W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***icroelectronics
N-channel 40 V, 3.5 mOhm typ., 80 A STripFET F6 Power MOSFET in D2PAK package
*** Source Electronics
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 40V 80A D2PAK
***r Electronics
Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***(Formerly Allied Electronics)
IRL3705NSPBF N-channel MOSFET Transistor; 89 A; 55 V; 3-Pin D2PAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 55V 89A 3-Pin(2+Tab) D2PAK Tube
***nell
MOSFET, N, 55V, 89A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 89A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Diss
***ure Electronics
Single N-Channel 55 V 6.5 mOhm 76 nC HEXFET® Power Mosfet - D2PAK
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:75A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:170W; No. of Pins:3Pins RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
IRF1405ZSPBF
DISTI # IRF1405ZSPBF-ND		Infineon Technologies AGMOSFET N-CH 55V 75A D2PAK
RoHS: Compliant
Min Qty: 400
Container: Tube		Limited Supply - Call
    IRF1405ZSPBF
    DISTI # 91Y4725    		Infineon Technologies AGMOSFET, N-CH, 55V, 150A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:150A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power , RoHS Compliant: Yes0
      IRF1405ZSPBF
      DISTI # 70018170      		Infineon Technologies AGIRF1405ZSPBF N-channel MOSFET Transistor,150 A,55 V,4-Pin D2PAK
      RoHS: Compliant      		0
      • 400:$1.5800
      IRF1405ZSPBF
      DISTI # 942-IRF1405ZSPBF      		Infineon Technologies AGMOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC
      RoHS: Compliant      		80
      • 1:$2.8500
      • 10:$2.4200
      • 100:$1.9400
      • 250:$1.8400
      • 500:$1.6900
      • 1000:$1.4000
      • 2500:$1.3000
      • 5000:$1.2200
      IRF1405ZSPBFInternational RectifierPower Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant      		2450
      • 1000:$1.1500
      • 500:$1.2100
      • 100:$1.2600
      • 25:$1.3100
      • 1:$1.4100
      IRF1405ZSPBFInternational Rectifier75 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB2
      • 3:$2.4975
      • 1:$2.9970
      IRF1405ZSPBFInternational Rectifier 
      RoHS: Compliant      		Europe - 700
        IRF1405ZSPBF
        DISTI # 2579970        		Infineon Technologies AGMOSFET, N-CH, 55V, 150A, TO-263-3
        RoHS: Compliant        		38
        • 1:£2.4300
        • 10:£1.8300
        • 100:£1.4700
        • 250:£1.3900
        • 500:£1.2800
        Imagen Parte # Descripción
        IRF1405ZSTRLPBF

        Mfr.#: IRF1405ZSTRLPBF

        OMO.#: OMO-IRF1405ZSTRLPBF-INFINEON-TECHNOLOGIES

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        OMO.#: OMO-IRF1404-1190

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        Mfr.#: IRF1404ZSTRLPBF

        OMO.#: OMO-IRF1404ZSTRLPBF-INFINEON-TECHNOLOGIES

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        Mfr.#: IRF1404ZSTRLPBF,IRF1404Z

        OMO.#: OMO-IRF1404ZSTRLPBF-IRF1404Z-1190

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        Mfr.#: IRF1405STRRPBF

        OMO.#: OMO-IRF1405STRRPBF-INFINEON-TECHNOLOGIES

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        IRF1405ZSTRL7PP

        Mfr.#: IRF1405ZSTRL7PP

        OMO.#: OMO-IRF1405ZSTRL7PP-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 55V 150A D2PAK-7
        IRF1407PBF,IRF1407,F1407

        Mfr.#: IRF1407PBF,IRF1407,F1407

        OMO.#: OMO-IRF1407PBF-IRF1407-F1407-1190

        		 Nuevo y original
        IRF1407SPBF

        Mfr.#: IRF1407SPBF

        OMO.#: OMO-IRF1407SPBF-1190

        		 MOSFET, 75V, 100A, 7.8 MOHM, 160 NC QG, D2-PAK
        IRF1404ZLPBF

        Mfr.#: IRF1404ZLPBF

        OMO.#: OMO-IRF1404ZLPBF-126

        		 IGBT Transistors MOSFET MOSFT 40V 190A 3.7mOhm 100nC
        Disponibilidad
        Valores:
        Available
        En orden:
        4000
        Ingrese la cantidad:
        El precio actual de IRF1405ZSPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,54 US$
        1,54 US$
        10
        1,47 US$
        14,68 US$
        100
        1,39 US$
        139,05 US$
        500
        1,31 US$
        656,65 US$
        1000
        1,24 US$
        1 236,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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