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SIHB20N50E-GE3

SIHB20N50E-GE3
Mfr. #:
SIHB20N50E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHB20N50E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB20N50E-GE3 DatasheetSIHB20N50E-GE3 Datasheet (P4-P6)SIHB20N50E-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SIHB20N50E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
550 V
Id - Corriente de drenaje continua:
19 A
Rds On - Resistencia de la fuente de drenaje:
184 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
46 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
179 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
A granel
Altura:
4.83 mm
Longitud:
10.67 mm
Serie:
E
Ancho:
9.65 mm
Marca:
Vishay / Siliconix
Otoño:
25 ns
Tipo de producto:
MOSFET
Hora de levantarse:
27 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
48 ns
Tiempo típico de retardo de encendido:
17 ns
Unidad de peso:
0.050717 oz
Tags
SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 19A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N CHANNEL, 500V, 19A, TO-263-3
***ark
Transistor Polarity:N Channel
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHB20N50E-GE3
DISTI # SIHB20N50E-GE3-ND		Vishay SiliconixMOSFET N-CH 500V 19A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 1000:$1.8172
  • 500:$2.1547
  • 100:$2.6609
  • 10:$3.2450
  • 1:$3.6300
SIHB20N50E-GE3
DISTI # SIHB20N50E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 19A 3-Pin D2PAK (Alt: SIHB20N50E-GE3)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    SIHB20N50E-GE3
    DISTI # SIHB20N50E-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 500V 19A 3-Pin D2PAK - Tape and Reel (Alt: SIHB20N50E-GE3)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 1000:$1.6900
    • 2000:$1.5900
    • 4000:$1.4900
    • 6000:$1.4900
    • 10000:$1.4900
    SIHB20N50E-GE3
    DISTI # 38Y8547    		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 19A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes0
    • 1:$1.8700
    • 1000:$1.7700
    • 2000:$1.6600
    • 3000:$1.5600
    SIHB20N50E-GE3
    DISTI # 43Y2395    		Vishay IntertechnologiesMOSFET Transistor, N Channel, 19 A, 500 V, 0.16 ohm, 10 V, 4 V RoHS Compliant: Yes6928
    • 1:$3.3100
    • 10:$2.7400
    • 25:$2.5800
    • 50:$2.4200
    • 100:$2.2600
    • 250:$2.1900
    • 500:$1.9600
    SIHB20N50E-GE3
    DISTI # 78-SIHB20N50E-GE3    		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		2736
    • 1:$3.3100
    • 10:$2.7400
    • 100:$2.2600
    • 250:$2.1900
    • 500:$1.9600
    • 1000:$1.6600
    • 2000:$1.5700
    SIHB20N50E-GE3
    DISTI # 2471939    		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 19A, TO-263-3
    RoHS: Compliant    		6928
    • 1:£3.1600
    • 10:£2.6300
    • 100:£2.1600
    SIHB20N50E-GE3
    DISTI # 2471939    		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 19A, TO-263-3
    RoHS: Compliant    		6928
    • 1:$5.2400
    • 10:$4.3400
    • 100:$3.5900
    SIHB20N50E-GE3
    DISTI # 2471939RL    		Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 19A, TO-263-3
    RoHS: Compliant    		0
    • 1:$5.2400
    • 10:$4.3400
    • 100:$3.5900
    SIHB20N50E-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		Americas -
      Imagen Parte # Descripción
      VS-EPH3006LHN3

      Mfr.#: VS-EPH3006LHN3

      OMO.#: OMO-VS-EPH3006LHN3

      		 Rectifiers 600V 30A FRED Pt TO-247 LL 2L
      SSM3K72KFS,LF

      Mfr.#: SSM3K72KFS,LF

      OMO.#: OMO-SSM3K72KFS-LF

      		 MOSFET LowON Res MOSFET ID=.3A VDSS=60V
      ESR10EZPJ103

      Mfr.#: ESR10EZPJ103

      OMO.#: OMO-ESR10EZPJ103

      		 Thick Film Resistors - SMD 0805 10Kohm 5% Anti Surge AEC-Q200
      HM1188NL

      Mfr.#: HM1188NL

      OMO.#: OMO-HM1188NL

      		 Audio Transformers / Signal Transformers 100BaseTX SMD NonPoE 350uH 1-Port
      IPD65R650CEAUMA1

      Mfr.#: IPD65R650CEAUMA1

      OMO.#: OMO-IPD65R650CEAUMA1

      		 MOSFET CONSUMER
      ESR10EZPJ103

      Mfr.#: ESR10EZPJ103

      OMO.#: OMO-ESR10EZPJ103-ROHM-SEMI

      		 RES SMD 10K OHM 5% 0.4W 0805
      VS-EPH3006LHN3

      Mfr.#: VS-EPH3006LHN3

      OMO.#: OMO-VS-EPH3006LHN3-VISHAY

      		 FREDS - TO-247-E3
      IPD65R650CEAUMA1

      Mfr.#: IPD65R650CEAUMA1

      OMO.#: OMO-IPD65R650CEAUMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 650V 7A TO-252
      04025C471K4T2A

      Mfr.#: 04025C471K4T2A

      OMO.#: OMO-04025C471K4T2A-428

      		 Cap Ceramic 470pF 50V X7R 10% SMD 0402 125C Paper T/R
      CRCW08054K70FKEAC

      Mfr.#: CRCW08054K70FKEAC

      OMO.#: OMO-CRCW08054K70FKEAC-VISHAY-DALE

      		 D12/CRCW0805-C 100 4K7 1% ET1
      Disponibilidad
      Valores:
      Available
      En orden:
      1985
      Ingrese la cantidad:
      El precio actual de SIHB20N50E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      3,30 US$
      3,30 US$
      10
      2,73 US$
      27,30 US$
      100
      2,25 US$
      225,00 US$
      250
      2,18 US$
      545,00 US$
      500
      1,95 US$
      975,00 US$
      1000
      1,65 US$
      1 650,00 US$
      2000
      1,56 US$
      3 120,00 US$
      5000
      1,51 US$
      7 550,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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