OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IXFK64N50P

IXFK64N50P
Mfr. #:
IXFK64N50P
Fabricante:
Littelfuse
Descripción:
Darlington Transistors MOSFET 500V 64A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFK64N50P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXFK64N50P más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
FET - Single
Serie
IXFK64N50
embalaje
Tubo
Unidad de peso
0.352740 oz
Estilo de montaje
A través del orificio
Nombre comercial
HyperFET
Paquete-Estuche
TO-264-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
830 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
22 ns
Hora de levantarse
25 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
64 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Resistencia a la fuente de desagüe de Rds
85 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
85 ns
Tiempo de retardo de encendido típico
30 ns
Transconductancia directa-Mín.
50 S
Modo de canal
Mejora
Tags
IXFK64N5, IXFK64, IXFK6, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 550 Vds 85 mOhm 830 W Power Mosfet - TO-264
***ical
Trans MOSFET N-CH 500V 64A 3-Pin(3+Tab) TO-264AA
***ukat
N-Ch 500V 64A 830W 0,085R TO264AA
***ark
Mosfet, N, To-264; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:64A; On Resistance Rds(On):0.085Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFK64N50P
DISTI # IXFK64N50P-ND		IXYS CorporationMOSFET N-CH 500V 64A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube		25In Stock
  • 500:$8.6290
  • 100:$10.1167
  • 25:$11.0092
  • 1:$13.0900
IXFK64N50P
DISTI # 58M7613		IXYS CorporationMOSFET, N, TO-264,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,Power Dissipation Pd:830W RoHS Compliant: Yes63
  • 1:$13.6900
  • 10:$12.4400
  • 25:$11.5100
  • 50:$10.5900
  • 100:$10.3300
IXFK64N50P
DISTI # 747-IXFK64N50P		IXYS CorporationMOSFET 500V 64A
RoHS: Compliant		295
  • 1:$13.6900
  • 10:$12.4400
  • 25:$11.5100
  • 50:$10.5900
  • 100:$10.3300
IXFK64N50P
DISTI # 1427314		IXYS CorporationMOSFET, N, TO-264
RoHS: Compliant		33
  • 1:$20.8700
  • 25:$17.5500
  • 100:$16.1300
  • 500:$13.7600
IXFK64N50P
DISTI # 1427314		IXYS CorporationMOSFET, N, TO-264
RoHS: Compliant		33
  • 1:£11.2700
  • 5:£10.7500
  • 10:£9.0400
  • 50:£8.4800
  • 100:£8.2700
Imagen Parte # Descripción
IXFK64N50Q3

Mfr.#: IXFK64N50Q3

OMO.#: OMO-IXFK64N50Q3

 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A
IXFK66N85X

Mfr.#: IXFK66N85X

OMO.#: OMO-IXFK66N85X

 MOSFET 850V Ultra Junction X-Class Pwr MOSFET
IXFK60N55Q2

Mfr.#: IXFK60N55Q2

OMO.#: OMO-IXFK60N55Q2

 MOSFET 60 Amps 550V 0.09 Rds
IXFK64N60P

Mfr.#: IXFK64N60P

OMO.#: OMO-IXFK64N60P

 MOSFET 600V 64A
IXFK62N25

Mfr.#: IXFK62N25

OMO.#: OMO-IXFK62N25-1190

 Nuevo y original
IXFK64N50

Mfr.#: IXFK64N50

OMO.#: OMO-IXFK64N50-1190

 Nuevo y original
IXFK64N60P (P/B)

Mfr.#: IXFK64N60P (P/B)

OMO.#: OMO-IXFK64N60P-P-B--1190

 Nuevo y original
IXFK64N50Q3

Mfr.#: IXFK64N50Q3

OMO.#: OMO-IXFK64N50Q3-IXYS-CORPORATION

 MOSFET N-CH 500V 64A TO-264
IXFK60N55Q2

Mfr.#: IXFK60N55Q2

OMO.#: OMO-IXFK60N55Q2-IXYS-CORPORATION

 MOSFET 60 Amps 550V 0.09 Rds
IXFK64N60P

Mfr.#: IXFK64N60P

OMO.#: OMO-IXFK64N60P-IXYS-CORPORATION

 IGBT Transistors MOSFET 600V 64A
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de IXFK64N50P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
12,94 US$
12,94 US$
10
12,30 US$
122,96 US$
100
11,65 US$
1 164,91 US$
500
11,00 US$
5 500,95 US$
1000
10,35 US$
10 354,80 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
More Newest Products
Top