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RS1E350BNTB

RS1E350BNTB
Mfr. #:
RS1E350BNTB
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET 4.5V Drive Nch MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RS1E350BNTB Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
RS1E350BNTB más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
HSOP-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
35 A
Rds On - Resistencia de la fuente de drenaje:
1.2 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
185 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
35 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Semiconductor ROHM
Otoño:
105 ns
Tipo de producto:
MOSFET
Hora de levantarse:
215 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
235 ns
Tiempo típico de retardo de encendido:
45 ns
Parte # Alias:
RS1E350BN
Tags
RS1E350B, RS1E35, RS1E3, RS1E, RS1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 35A 8-Pin HSOP EP T/R
***et
N-Channel Mid-Power MOSFET 30V Drain-Source Voltage ±35A Continuous Drain Current 3W Power Dissipation Low-on Resistance 8-Pin HSOP Emboss T/R
***nell
MOSFET, N-CH, 30V, 35A, HSOP; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 35W; Transistor Case Style: HSOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Parte # Mfg. Descripción Valores Precio
RS1E350BNTB
DISTI # RS1E350BNTBCT-ND		ROHM SemiconductorMOSFET N-CH 30V 35A 8HSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1954In Stock
  • 1000:$0.7272
  • 500:$0.8776
  • 100:$1.0682
  • 10:$1.3290
  • 1:$1.4800
RS1E350BNTB
DISTI # RS1E350BNTBDKR-ND		ROHM SemiconductorMOSFET N-CH 30V 35A 8HSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1954In Stock
  • 1000:$0.7272
  • 500:$0.8776
  • 100:$1.0682
  • 10:$1.3290
  • 1:$1.4800
RS1E350BNTB
DISTI # RS1E350BNTBTR-ND		ROHM SemiconductorMOSFET N-CH 30V 35A 8HSOP
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.6817
RS1E350BNTB
DISTI # RS1E350BNTB		ROHM SemiconductorN-Channel Mid-Power MOSFET 30V Drain-Source Voltage ±35A Continuous Drain Current 3W Power Dissipation Low-on Resistance 8-Pin HSOP Emboss T/R - Tape and Reel (Alt: RS1E350BNTB)
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.7699
  • 5000:$0.7219
  • 10000:$0.6799
  • 15000:$0.6419
  • 25000:$0.6249
RS1E350BNTB
DISTI # 755-RS1E350BNTB		ROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
RoHS: Compliant		2205
  • 1:$1.6000
  • 10:$1.3700
  • 100:$1.0500
  • 500:$0.9260
  • 1000:$0.7310
  • 2500:$0.6480
  • 10000:$0.6240
RS1E350BNTBROHM Semiconductor 1139
  • 963:$0.9450
  • 516:$1.0395
  • 1:$2.5200
RS1E350BNTB  1689
    RS1E350BNTB
    DISTI # 2706774    		ROHM SemiconductorMOSFET, N-CH, 30V, 35A, HSOP
    RoHS: Compliant    		71
    • 1000:$1.0800
    • 500:$1.3100
    • 100:$1.6800
    • 10:$2.0900
    • 1:$2.3000
    RS1E350BNTBROHM SemiconductorRoHS(ship within 1day)1424
    • 1:$1.7400
    • 10:$1.3000
    • 50:$0.8700
    • 100:$0.7000
    • 500:$0.6500
    • 1000:$0.6300
    RS1E350BNTB
    DISTI # 2706774    		ROHM SemiconductorMOSFET, N-CH, 30V, 35A, HSOP
    RoHS: Compliant    		71
    • 500:£0.5910
    • 250:£0.6560
    • 100:£0.7210
    • 25:£0.9450
    • 5:£1.0400
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    Disponibilidad
    Valores:
    Available
    En orden:
    1985
    Ingrese la cantidad:
    El precio actual de RS1E350BNTB es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,60 US$
    1,60 US$
    10
    1,37 US$
    13,70 US$
    100
    1,05 US$
    105,00 US$
    500
    0,93 US$
    463,00 US$
    1000
    0,73 US$
    731,00 US$
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