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SPW11N60CFD

SPW11N60CFD
Mfr. #:
SPW11N60CFD
Fabricante:
Rochester Electronics, LLC
Descripción:
IGBT Transistors MOSFET N-Ch 650V 11A TO247-3 CoolMOS CFD
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SPW11N60CFD Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
INFINEON
categoria de producto
FET - Single
Serie
CoolMOS CFD
embalaje
Tubo
Alias ​​de parte
SP000014534 SPW11N60CFDFKSA1 SPW11N60CFDXK
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Nombre comercial
CoolMOS
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
125 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
7 ns
Hora de levantarse
18 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
11 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Resistencia a la fuente de desagüe de Rds
440 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
43 ns
Tiempo de retardo de encendido típico
34 ns
Modo de canal
Mejora
Tags
SPW11N60CF, SPW11N60C, SPW11N60, SPW11N6, SPW11N, SPW11, SPW1, SPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-CH 600V 11A 3-Pin TO-247 T/R
***ineon SCT
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies, PG-TO247-3, RoHS
***ark
MOSFET, N, COOLMOS, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:11A; Resistance, Rds On:0.44ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247; ;RoHS Compliant: Yes
***ineon
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. | Summary of Features: Fourth series of CoolMOS market entry in 2004; Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low; Specific for phase-shift ZVS and DC-AC power applications | Benefits: Improved efficiency; More efficient, more compact, lighter and cooler; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness | Target Applications: Solar; Adapter; PC power; Consumer; Server; Telecom
***nell
MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.44ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Cont Current Id @ 25°C:11A; Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:125W; Pulse Current Idm:28A; Termination Type:Through Hole; Voltage Vds:650V; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Parte # Mfg. Descripción Valores Precio
SPW11N60CFD
DISTI # C1S322000037632		Infineon Technologies AGTrans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		1
  • 1:$2.5800
SPW11N60CFDFKSA1
DISTI # SPW11N60CFDFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 11A TO-247
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
    SPW11N60CFD
    DISTI # 726-SPW11N60CFD    		Infineon Technologies AGMOSFET N-Ch 650V 11A TO247-3 CoolMOS CFD
    RoHS: Compliant    		0
      SPW11N60CFDFKSA1
      DISTI # N/A      		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
        SPW11N60CFDInfineon Technologies AGPower Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
        RoHS: Compliant        		4796
        • 1000:$1.9300
        • 500:$2.0300
        • 100:$2.1100
        • 25:$2.2000
        • 1:$2.3700
        SPW11N60CFD
        DISTI # 1095703        		Infineon Technologies AG 
        RoHS: Compliant        		0
        • 1:$5.5100
        • 10:$4.6900
        • 100:$4.0600
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        Mfr.#: SPW11N80C3FKSA1

        OMO.#: OMO-SPW11N80C3FKSA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 800V 11A TO-247
        Disponibilidad
        Valores:
        Available
        En orden:
        3000
        Ingrese la cantidad:
        El precio actual de SPW11N60CFD es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        2,90 US$
        2,90 US$
        10
        2,75 US$
        27,50 US$
        100
        2,61 US$
        260,55 US$
        500
        2,46 US$
        1 230,40 US$
        1000
        2,32 US$
        2 316,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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