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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SQJ910AEP-T1-GE3 DISTI # V36:1790_14140420 | Vishay Intertechnologies | DUAL N-CHANNEL 30-V (D-S) 175C | 0 |
|
| SQJ910AEP-T1_GE3 DISTI # SQJ910AEP-T1_GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO T/R (Alt: SQJ910AEP-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SQJ910AEP-T1_GE3 DISTI # SQJ910AEP-T1_GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ910AEP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 | |
| SQJ910AEP-T1_GE3 DISTI # 76Y1548 | Vishay Intertechnologies | DUAL N-CHANNEL 30-V (D-S) 175C MOSFE | 0 |
|
| SQJ910AEP-T1_GE3 DISTI # 78-SQJ910AEP-T1_GE3 | Vishay Intertechnologies | MOSFET Dual N-Channel 30V AEC-Q101 Qualified RoHS: Compliant | 7974 |
|
| SQJ910AEPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 30A I(D), 30V, 0.007ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| SQJ910AEP-T1_GE3 DISTI # TMOS1494 | Vishay Intertechnologies | 2N-CH 30V 30A 7mOhm PPSO-8L RoHS: Compliant | Stock DE - 0Stock HK - 0Stock US - 0 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: SQJ910AEP-T1_GE3 OMO.#: OMO-SQJ910AEP-T1-GE3 |
MOSFET Dual N-Channel 30V AEC-Q101 Qualified |
|
Mfr.#: SQJ910AEP-T2_GE3 OMO.#: OMO-SQJ910AEP-T2-GE3 |
MOSFET 30V Vds 20V Vgs PowerPAK SO-8L |
|
Mfr.#: SQJ910AEP OMO.#: OMO-SQJ910AEP-1190 |
Nuevo y original |
|
|
Mfr.#: SQJ910AEPT1GE3 OMO.#: OMO-SQJ910AEPT1GE3-1190 |
Power Field-Effect Transistor, 30A I(D), 30V, 0.007ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |